A tddb test structure and test method

Abstract

The present invention relates to a test structure and a test method of TDDB, the test structure comprises: a test unit, a resistance array unit and a control unit; wherein, the test unit is located above the resistance array unit, and is arranged between the two There is a metal medium layer, and the resistance array unit and the control unit are connected in parallel with the test unit and arranged between the first connection end and the second connection end; through the first connection end and the second connection end Applying different voltages between them, the control unit controls the resistance array unit to be in a working stress state or a non-working measurement state, and evaluates the effect of Joule heat on the metal by the resistance array unit through the two states. The influence of the electrical breakdown performance of the dielectric layer truly simulates the influence of resistance Joule heat on the reliability of the metal dielectric layer when working in a real integrated circuit. The invention solves the defect that the TDDB performance caused by the Joule heating effect cannot be evaluated in the prior art, and improves the detection ability of the device to improve the performance and yield of the device.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to a TDDB test structure and a test method. Background technique [0002] With the continuous development of integrated circuit technology, more devices will be integrated on the chip, and the chip will adopt faster speed. Driven by these requirements, the geometric size of devices will continue to shrink, and new materials, new technologies and new manufacturing processes will be continuously used in the chip manufacturing process. These improvements have a great impact on the life of a single device, which may result in increased vulnerability of local areas, increased power density, increased device complexity, and the introduction of new failure mechanisms. must be considered at the outset, and monitored and tested throughout the development and manufacturing of the device, all the way to the completion of the final product. [0003] With the continuous red...

AI Technical Summary

Problems solved by technology

The test method is as follows: in the stress state, the first test piece 101 applies a stress voltage, and the second test piece 102 is grounded; in the measurement state, the first test piece 101 applies a voltage Vop, and the second test piece 102 The test piece 102 is grounded, and the TDDB performance of the device is evaluated through the two states, but this test structure cannot evaluate the degradation of the TDDB performance due to the high-resistance (High-R) Joule heating effect (Joule heating effect)

[0006] Therefore, as the semiconductor device shrinks, the high resistance (High-R) Joule heating effect (Joule heating effect) has an increasing impact on TDDB performance, but the test structure in the prior art cannot evaluate the high resistance (High-R) well. ) Joule heating effect (Joule heating effect) on TDDB performance, so it is necessary to improve the test structure in the prior art to solve the above problems and improve the performance of the device and the detection ability of the yield rate

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