radiation detection circuit
A technology of radiation detection and circuit, applied in the direction of dosimeter, etc., can solve the complex problems of digital automation system, achieve the effect of simple and easy detection, reduce the influence of environmental noise, and simple structure
Active Publication Date: 2016-10-26
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
Therefore, this detection circuit is too complex to satisfy some digital automation systems
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[0012] Embodiments of the present invention are described in detail below.
[0013] Examples of the described embodiments are shown in the drawings, wherein like or similar reference numerals designate like or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention. The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in i...
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The invention provides a radiation detection circuit, which comprises a first radiation sensitive PMOS (P type metal oxide semiconductor) transistor, a second radiation sensitive PMOS transistor, a first current source, a second current source and a differential amplifier, wherein the first radiation sensitive PMOS transistor and the second radiation sensitive PMOS transistor are respectively used for sensing the to-be-detected radiation, the first current source and the first radiation sensitive PMOS transistor are serially connected to form a first branch circuit, the second current source and the second radiation sensitive PMOS transistor are serially connected to form a second branch circuit, the first branch circuit is connected with the second branch circuit in parallel, the output end of the first branch circuit and the output end of the second branch circuit are respectively led out of the first radiation sensitive PMOS transistor and the second radiation sensitive PMOS transistor and are respectively connected with the two input ends of the differential amplifier, and the output of the differential amplifier is used for reflecting the size of the to-be-detected radiation. The radiation detection circuit has the advantages that the structure is simple, and the influence by environment noise is reduced.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a novel PMOS total dose radiation detection circuit. Background technique [0002] In space, many electronic devices will be exposed to certain radiation environments. In order to ensure the reliability of these electronic devices, it is necessary to detect the total dose of radiation. Because once the total radiation dose exceeds a certain amount, it will cause the failure of the electronic system. [0003] PMOS total dose radiation detectors mainly include radiation-sensitive field-effect transistors made by a specific process. The MOSFET threshold voltage drifts due to oxide traps and interface trap charges generated after irradiation. By calibrating the relationship between the threshold voltage drift and the radiation dose, the threshold voltage drift is measured to obtain the radiation dose. Generally speaking, after NMOS is irradiated, oxide trap charges cause i...
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IPC IPC(8): G01T1/02
Inventor 刘梦新刘鑫赵发展韩郑生
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI