Split Bias RF Power Amplifier with Enhanced Linearity

Abstract

A split bias radio frequency power amplifier with enhanced linearity is disclosed. A radio frequency (RF) power amplifier (PA) may include a first transistor and a second transistor. The first power unit may be coupled with the first transistor, and the second power unit may be coupled with the second transistor. In an embodiment, a first transistor may be sized to operate at a first current density, and a second transistor may be sized to operate at a second current density.

Description

technical field [0001] Embodiments of the present disclosure generally relate to the field of radio frequency (RF) power amplifiers (PAs). Background technique [0002] For RF PAs used in wireless communications, linearity can be very important. In general, linearity can be a measure of how linear the RF signal output of an RF PA is with increasing RF input signal. In other words, linearity can refer to the RF PA's gain (sometimes called AM-AM distortion, where AM can refer to amplitude modulation) and phase shift (sometimes called AM-PM distortion, where PM can refer to phase modulation), and it may be desirable for the gain and phase to be constant over a range of RF signal inputs or outputs such that the gain and phase of the RF PA at one signal input is roughly the same as the gain and phase of the RF PA at the other signal input same. One of the key measurements of RF PA linearity can be the ACPR (Adjacent Channel Power Ratio), which can be the ratio of the total adj...

AI Technical Summary

Problems solved by technology

However, regardless of the biasing circuit, existing RF PAs can still exhibit non-linear distortion in the output signal of the RF PA when the RF input signal to the RF PA is increased

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