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Film-forming resin containing sesquiterpene lactone and its positive dry exposure 193nm photoresist

A technology of sesquiterpene lactone and film-forming resin, applied in optics, optomechanical equipment, instruments, etc., can solve the problem of weak adhesion between photoresist and substrate silicon wafer, heat resistance and etching resistance of photoresist It can improve the etching resistance, reduce the cost and improve the heat resistance.

Active Publication Date: 2017-03-29
昆山西迪光电材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are the following technical problems in the actual process: (1) the adhesion between the photoresist and the substrate silicon wafer is weak; (2) the heat resistance and etching resistance of the photoresist are poor; on the other hand, as we all know, my country is rich in natural product resources, turpentine, rosin, argyleol, terpenes, sesquiterpenes and their lactones are widely sourced, and the output is huge

Method used

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  • Film-forming resin containing sesquiterpene lactone and its positive dry exposure 193nm photoresist
  • Film-forming resin containing sesquiterpene lactone and its positive dry exposure 193nm photoresist
  • Film-forming resin containing sesquiterpene lactone and its positive dry exposure 193nm photoresist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Embodiment 1: a kind of copolymer film-forming resin containing natural product sesquiterpene lactone, by following comonomer and its content, under the condition that free radical initiator exists, it is prepared by heating and carrying out copolymerization reaction:

[0049]

[0050] Butyrolactone-2-methacrylate 1.70 grams;

[0051] 2.20 grams of cyclopentyl isobornyl methacrylate;

[0052] Pyridoxine A Methacrylate 6.38g.

[0053]The preparation method is: in a 100ml three-neck flask equipped with an electric stirrer, condenser, thermometer, temperature controller, heating mantle and nitrogen inlet, add butyrolactone-2-methacrylate (CAS# 195000-66- 9) 1.70 grams, 2.20 grams of cyclopentaneisobornyl methacrylate (CAS# 34759-34-7), 6.38 grams of pyridoxinyl methacrylate, 60 grams of tetrahydrofuran, and nitrogen for 10 minutes under stirring, then Heat to 60-70°C, add dropwise 0.56 g of azobisisobutyronitrile (AIBN) in 10 g of tetrahydrofuran to make a solution wi...

Embodiment 2

[0054] Embodiment two: a kind of copolymer film-forming resin containing natural product sesquiterpene lactone, by following comonomer and content thereof, under the condition that free radical initiator exists, carry out copolymerization reaction preparation by heating:

[0055]

[0056] Butyrolactone-2-methacrylate 1.70 g;

[0057] 2.22 grams of isobornyl methacrylate;

[0058] Pyridoxine A Methacrylate 6.38g.

[0059] The preparation method is: in a 100ml three-neck flask equipped with an electric stirrer, a condenser, a thermometer, a temperature controller, a heating mantle and a nitrogen inlet, add 1.70 grams of butyrolactone-2-methacrylate, isomethacrylate 2.22 grams of bornyl ester, 6.38 grams of dwarfyl methacrylate, 60 grams of tetrahydrofuran, nitrogen gas flow for 10 minutes under stirring, and then heated to 65 ~ 70 ° C, add 0.55 grams of azobisisobutyronitrile (AIBN) in 10 grams Prepare a solution in tetrahydrofuran and then add it to the reaction system, co...

Embodiment 3

[0060] Embodiment three: a kind of copolymer film-forming resin containing natural product sesquiterpene lactone, by following comonomer and content thereof, under the condition that free radical initiator exists, carry out copolymerization reaction preparation by heating:

[0061]

[0062] 3.64 grams of 1-ethylcyclopentanol methacrylate;

[0063] 6.38 grams of diosin A methacrylate;

[0064] The preparation method is: in a 100ml three-neck flask equipped with an electric stirrer, condenser, thermometer, temperature controller, heating mantle and nitrogen inlet, add 3.64 grams of 1-ethylcyclopentanol methacrylate, methyl 6.38 grams of pyridoxine A acrylate, 60 grams of tetrahydrofuran, nitrogen gas flow for 10 minutes under stirring, then heated to 60 ~ 70 ° C, adding 0.55 grams of azobisisobutyronitrile (AIBN) in 10 grams of tetrahydrofuran to make a solution and then After adding to the reaction system, the reaction was continued under reflux for 18 hours, and then coole...

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Abstract

The invention discloses a film-forming resin containing sesquiterpene lactone and a positive dry exposure 193-nanometer photoresist thereof. The film-forming resin is prepared from a comonomer which at least comprises the sesquiterpene lactone in a solvent through copolymerization reaction under the condition of the presence of a radical initiator. The film-forming resin is characterized in that the molecular weight of the film-forming resin is 4,000-1,000,000, and the molecular weight distribution of the film-forming resin is 1.4-2.4; and the comonomer mainly comprises the following compounds in percentage by weight: 10%-60% of composition units containing the natural product sesquiterpene lactone, 5%-40% of monomers containing acid-sensitive groups and 1%-20% of other property regulating component monomers. The film-forming resin containing the sesquiterpene lactone and the positive dry exposure 193-nanometer photoresist thereof, which are disclosed by the invention, have good resolution and can be used for enhancing the adhesion property between a photoresist and a silicon slice, enhancing the heat resistant property of the photoresist, improving the etching resistant property of the photoresist and preventing the situations that a photoetching image is influenced and an expensive exposure machine lens is damaged by forming gas overflow from being generated.

Description

technical field [0001] The present invention relates to a film-forming resin containing natural sesquiterpene lactone copolymer and the film-forming resin prepared by using the film-forming resin for dry exposure deep ultraviolet (DUV) positive photoresist with ArF laser (193nm) as the exposure light source. Chemically amplified photoresist compositions. Background technique [0002] Photoresists are key functional materials for photolithography processes in the large-scale integrated circuit industry. The deep ultraviolet (DUV) band exposure process developed in the 1990s with ArF laser (193nm) as the exposure light source is widely used in the manufacture of large-scale integrated circuits, and its resolution can reach 0.13-0.10 microns. At present, due to the continuous update of exposure equipment, technological innovation and continuous improvement of photoresist, the resolution has been continuously improved and can reach 0.065 microns. Due to the continuous improvem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08F220/32C08F220/18C08F220/40C08F220/28G03F7/039
Inventor 冉瑞成沈吉孙友松潘新刚
Owner 昆山西迪光电材料有限公司