Manufacturing method of thin film transistor
A technology for thin film transistors and a manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as low yield of thin film transistors, abnormal operation of thin film transistors, abnormal design of thin film transistors, etc., to avoid The effect of reducing the residual film value and improving the manufacturing yield
Active Publication Date: 2017-07-25
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
A low residual film value will cause abnormalities in the design of the source and drain of the thin film transistor, and the abnormality of the source and drain will cause the thin film transistor to not work normally, resulting in a low yield of the thin film transistor
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0042] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0043] see figure 1 , which is a flowchart of a manufacturing method of a thin film transistor according to a preferred embodiment of the present invention. The manufacturing method of the thin film transistor (thin film transistor, TFT) 1 includes the following steps.
[0044] Step S101 , providing a substrate 100 . Please also refer to figure 2 , in this embodiment, the substrate 100 is a glass substrate. Understandably, in other implementation manners,...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
Provided is a method for manufacturing a thin film transistor, comprising: providing a substrate; forming a first metal layer on the middle part of one surface of the substrate; forming a gate insulating layer, a semiconductor layer and a second metal layer on the surface of the substrate on which the first metal layer is formed and on the first metal layer, forming a photoresist layer on the second metal layer, the photoresist layer includes a first portion and a second portion located on the two opposite edges of the first portion, the width of the first portion is the same as the width of the second metal layer and is overlapped on the second metal layer, the second portion extends from the edge of the first portion, thereby the second portion is such that the width dimension of the photoresist layer is larger than the length dimension of the channel between the source electrode and the drain electrode; patterning the photoresist layer to expose the edge portion of the second metal layer, and patterning the second metal layer and the semiconductor layer to form the channel, so as to define the source electrode and the drain electrode.
Description
technical field [0001] The invention relates to the field of manufacturing thin film transistors, in particular to a method for manufacturing thin film transistors with higher yield. Background technique [0002] A thin film transistor (thin film transistor, TFT), as a switching element, is widely used in electronic devices such as liquid crystal display devices. However, when manufacturing the source and drain of thin-film transistors, a metal layer is formed first, and then a photoresist layer is laid on the metal layer. By designing a pattern on the photomask, the photomask has full light transmission. The pattern of the opaque area and the semi-transparent area, so that after the light passes through the mask, the light transmission in the fully transparent area, the opaque area and the semi-transparent area are different, and the amount of light felt by the photoresist is different. , the laid photoresists form different residual film amounts. For positive photoresists...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336
CPCH01L21/027H01L29/66772
Inventor 阙祥灯
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD