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Data writing method, memory control circuit unit and memory storage device

A technology for controlling circuits and storage devices, applied in memory systems, data processing input/output processes, electrical digital data processing, etc., can solve the problem of high cost and achieve the effect of improving speed

Active Publication Date: 2017-10-03
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to consider the above-mentioned rewriting requirements, a large-capacity buffer memory must be used
Higher cost per storage unit for buffer memory with larger bandwidth

Method used

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  • Data writing method, memory control circuit unit and memory storage device
  • Data writing method, memory control circuit unit and memory storage device
  • Data writing method, memory control circuit unit and memory storage device

Examples

Experimental program
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Embodiment Construction

[0086] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module and a controller (also called a control circuit). Typically memory storage devices are used with a host system such that the host system can write data to or read data from the memory storage device.

[0087] figure 1 It is a host system and a memory storage device shown according to an exemplary embodiment, figure 2 It is a schematic diagram of a computer, an input / output device and a memory storage device according to an exemplary embodiment of the present invention.

[0088] Please refer to figure 1 , the host system 1000 generally includes a computer 1100 and an input / output (input / output, hereinafter referred to as I / O) device 1106 . The computer 1100 includes a microprocessor 1102 , a random access memory (random access memory, RAM for short) 1104 , a system bus 1108 and a data transmission interface 1110 . The input / output device...

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PUM

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Abstract

The invention provides a data writing method, a memory control circuit unit and a memory storage device. The device comprises a first buffer memory, a second buffer memory and a rewritable nonvolatile memory. The transmission bandwidth of the first buffer memory is larger than the transmission bandwidth of the second buffer memory. The method comprises receiving writing instructions and corresponding first data from a host system; determining whether the first data are continuous big data; storing the first data in a first data temporary storage region of the first buffer memory temporarily if the first data are continuous big data, and writing the first data from the first data temporary storage region into the rewritable nonvolatile memory; storing the first data in a second data temporary storage region of the second buffer memory temporarily if the second data are continuous big data temporarily.

Description

technical field [0001] The invention relates to a data writing method for a rewritable non-volatile memory, in particular to a data writing method, a memory control circuit unit and a memory storage device. Background technique [0002] The rapid growth of digital cameras, mobile phones, and MP3 players has led to a rapid increase in consumer demand for storage media. Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., it is most suitable for portable electronic products, such as notebook computers . A solid state drive is a memory storage device that uses flash memory as a storage medium. Therefore, the flash memory industry has become a very popular part of the electronics industry in recent years. [0003] If the memory storage device uses a rewritable non-volatile memory as the storage medium, when data is written into t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06G06F12/0871G06F12/0802
CPCG06F3/0652G06F3/0656G06F3/0679G06F12/0246G06F12/0802
Inventor 叶志刚
Owner PHISON ELECTRONICS