Germanium etching method
A dry etching and germanium layer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as poor morphology and affect the performance of semiconductor devices, and achieve the effect of improving morphology and performance
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[0028] It can be seen from the background technology that the morphology of the germanium layer formed by the existing germanium etching process is relatively poor. The reason is analyzed: the etching gas used in dry etching includes: chlorine gas (Cl 2 ), boron chloride (BCl 2 ), argon (Ar), nitrogen (N 2 ). Among them, chlorine gas is used as the main etching gas to react with the germanium layer to form germanium chloride (GeCl x ), the gas flow in the etched reaction chamber is taken out of the reaction chamber. However, when germanium is dry-etched, the germanium chloride generated by etching is easy to redeposit and adheres to the top or sidewall of the photoresist. The attached germanium chloride is difficult to remove by traditional etching methods. Moreover, the attached germanium chloride will affect the removal process of the photoresist, and the resulting germanium chloride is prone to redeposition, forming a germanium chloride polymer attached to the surface of...
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