Read application circuit of anti-fuse storage

Abstract

The invention discloses a read application circuit of an anti-fuse storage. The read application circuit comprises an anti-fuse unit, a current bias unit, a voltage converting unit, a reference voltage unit and a comparing output unit. A conduction current output end of the anti-fuse unit is connected with a first input end of the voltage converting unit. An output end of the current bias unit is respectively connected with a second input end of the voltage converting unit and an input end of the reference voltage unit, an output end of the voltage converting unit is connected with an input end of the comparing output unit, and an output end of the reference voltage unit is connected with another input end of the comparing output unit. According to the read application circuit, by adopting a sampling amplifying circuit based on a differential current amplifying structure, drive capability of a sampling circuit is improved, high-speed acquisition and amplification of an anti-fuse conduction current are realized, and misjudgment caused by a single event effect can be effectively reduced. The read application circuit can be widely applied to the field of integrated circuits.

Description

technical field [0001] The present invention relates to the field of antifuse, and more specifically, relates to an application circuit for reading an antifuse memory. Background technique [0002] Antifuse elements store information by changing from an insulating state to a conducting state. Writing information to the anti-fuse element is performed by dielectric breakdown caused by application of high voltage. The anti-fuse memory cell has a capacitive characteristic before programming, and no conduction channel is formed; when a programming breakdown occurs, a conduction channel will be formed at both ends of the cell through which current can pass, and the magnitude of the conduction current is related to the programming effect . [0003] The traditional antifuse storage and reading circuit mostly adopts a voltage comparison structure. By directly connecting the antifuse bit line terminal to the gate of the comparator, the current is conducted through the channel of the...

AI Technical Summary

Problems solved by technology

For unprogrammed antifuse cells, due to the capacitive state of the word line and the bit line, after the single event effect occurs at the input node, the charge accumulated on the input gate cannot be discharged in time, which will cause the output error of the read comparator, and eventually cause the memory data read error

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