Static protection circuit
An electrostatic protection and circuit technology, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve problems such as failure, difficulty in clamping electrostatic pulses, large resistance, etc., and achieve the effect of good electrostatic protection ability
Active Publication Date: 2017-06-16
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology
[0004] but, figure 1 During the release process of the electrostatic pulse, the resistance on the current path is relatively large, so that a large voltage drop is formed during the current path, making it difficult to clamp the potential on the first input / output pin of the electrostatic pulse. Make the electrostatic protection process invalid
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[0027] The electrostatic protection circuit of the present invention will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is shown, and it should be understood that those skilled in the art can modify the present invention described here and still achieve the beneficial effects of the present invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
[0028] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiment...
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The electrostatic protection circuit of the present invention includes: a first input / output pin, a second input / output pin, a power output terminal, a ground terminal, a clamp circuit, a functional unit, a first parasitic thyristor and a second parasitic thyristor. The first parasitic thyristor includes the first N-type connection region, the first P-type doped region, the first P-type connection region, the first N-type doped region, and the second parasitic The thyristor includes the second N-type connection region, the second P-type doped region, the second P-type connection region, and the second N-type doped region. In the present invention, the combination circuit of the first parasitic thyristor, the second parasitic thyristor and the clamping circuit is used to realize the electrostatic discharge protection of the functional unit, when the electrostatic pulse generated on the first input / output pin can pass through the first parasitic thyristor and the The diode structure formed on the surface of the second parasitic thyristor and the parasitic transistor inside it realize electrostatic discharge at the same time, and the electrostatic protection capability is better.
Description
technical field [0001] The invention relates to the design field of static electricity protection circuits for integrated circuits, in particular to a design of static electricity protection circuits applied to low noise amplifier circuits. Background technique [0002] Low-Noise Amplifier (LNA) is a key module of the RF front-end, and its performance plays a decisive role in the whole system. Low-noise amplifiers are required to have low noise while providing a certain gain, so as to suppress the noise of subsequent modules such as mixers. [0003] In the prior art, reference is made to the electrostatic protection circuit diagram of the low noise amplifier circuit figure 1 As shown, it includes first input / output pin 1, second input / output pin 2, low noise amplifier 3, clamping circuit 4, first diode structure 5, second diode structure 6, power output terminal VDD and ground terminal GND, when an electrostatic pulse is generated in the first input / output pin 1, the charg...
Claims
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IPC IPC(8): H01L27/02
Inventor 单毅
Owner WUHAN XINXIN SEMICON MFG CO LTD