Method and device for clearing away information on complementary metal oxide semiconductor (CMOS)

A technology for clearing instructions and signals, applied in the field of clearing CMOS information, and can solve problems such as increased labor costs

Inactive Publication Date: 2015-04-22
HEFEI LCFC INFORMATION TECH
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The above two methods must disassemble the machine, which will bring a lot of inconvenience and increase the labor cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for clearing away information on complementary metal oxide semiconductor (CMOS)
  • Method and device for clearing away information on complementary metal oxide semiconductor (CMOS)
  • Method and device for clearing away information on complementary metal oxide semiconductor (CMOS)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described below are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0050] figure 1 It is a functional block diagram of the first method for clearing CMOS information provided by the embodiment of the present invention, such as figure 1 As shown, the steps include:

[0051] Step S11: The embedded controller detects the system control signal.

[0052] Step S12: According to the detection result, it is judged whether to clear the CMOS information.

[0053] Specifically, if the embedded controller detects the system control signal, it is judged whether the system control signal is a system control signal for clearing the CMOS information; Execute steps S13 and S14.

[0054] Step S13: If it is determined that the CMOS inf...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method and a device for clearing away information on a complementary metal oxide semiconductor (CMOS), relating to computer technologies. The method comprises the steps that an embedded controller detects a system control signal; if the system control signal is detected, the embedded controller judges whether the system control signal is used for clearing away the information on the CMOS; if yes, the embedded controller sends an instruction to close down the system to a central processing unit; after the system is closed down, the embedded controller sends an instruction to clear away the information on the CMOS to the central processing unit; and the central processing unit clears away the information on the CMOS according to the instruction to clear away the information on the CMOS. The method can clear away the information on the CMOS automatically, is convenient for users to operate, and lowers human cost.

Description

technical field [0001] The invention relates to computer technology, in particular to a method and device for clearing CMOS information. Background technique [0002] During the design and end-user use of computers (such as laptops), the following problems often exist: [0003] 1. The configuration information of the real-time clock (RTC) register, that is, the CMOS information, is wrong; [0004] 2. The end user wishes to restore the RTC settings to the initial and default values. [0005] Based on the current design, once an error occurs or the default needs to be restored, the CMOS information needs to be cleared in the following two ways: [0006] 1. The RTC register is powered by the battery inside the computer. The battery keeps the clock active and retains the CMOS information. If the battery cannot supply power normally, the CMOS information will be lost. Therefore, it can be disassembled and later, it will be used to power the RTC register. Unplug the battery to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F1/24
CPCG06F1/24
Inventor 常文涛
Owner HEFEI LCFC INFORMATION TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap