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7600 nm long-wave pass infrared filtering sensitive element

A sensitive element, 137nm technology, applied in the field of infrared filter sensitive elements, it can solve the problems of poor precision and low signal-to-noise ratio, and achieve the effect of improving the signal-to-noise ratio and improving the test accuracy.

Inactive Publication Date: 2015-05-06
MULTI IR OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the current infrared filter sensitive elements have low signal-to-noise ratio and poor precision, which cannot meet the needs of market development.

Method used

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  • 7600 nm long-wave pass infrared filtering sensitive element
  • 7600 nm long-wave pass infrared filtering sensitive element

Examples

Experimental program
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Embodiment 1

[0014] Such as figure 1 with figure 2 As shown, a kind of 7600nm long-wave pass infrared filter sensitive element described in this embodiment includes a substrate 2 with Ge as raw material, Ge and ZnS as the first coating layer 1 and Ge and ZnS as the second coating layer 3, And the substrate 2 is arranged between the first coating layer 1 and the second coating layer 3, and the first coating layer 1 is arranged sequentially from inside to outside including a Ge layer with a thickness of 165nm, a ZnS layer with a thickness of 237nm, and a ZnS layer with a thickness of 223nm. Ge layer, 411nm thick ZnS layer, 137nm thick Ge layer, 338nm thick ZnS layer, 137nm thick Ge layer, 254nm thick ZnS layer, 171nm thick Ge layer, 263nm thick ZnS layer, 157nm thick Ge layer , 499nm thick ZnS layer, 141nm thick Ge layer, 247nm thick ZnS layer, 125nm thick Ge layer, 273nm thick ZnS layer, 391nm thick Ge layer, 178nm thick ZnS layer, 166nm thick Ge layer, 487nm thick Thick ZnS layer, 131nm...

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Abstract

The invention discloses a 7600 nm long-wave pass infrared filtering sensitive element. The 6000 nm long-wave pass infrared filtering sensitive element comprises a substrate taking Ge as raw material, a first film coating layer made of Ge and ZnS and a second film coating layer made of Ge and ZnS; the substrate is arranged between the first film coating layer and the second film coating layer. The 7600 nm long-wave pass infrared filtering sensitive element can largely improve the signal-to-noise ratio and improve the testing accuracy during the temperature measurement process, and is applicable to popularize and use on a large scale. The 50% Cut on of the filtering sensitive element is equal to 7600+ / -50 nm, 7700-11000 nm; Tavg is not less than 90%, 8000-11000 nm; T is not less than 88%, 1500-7400 nm, and T is not more than 3%.

Description

technical field [0001] The invention relates to the field of infrared filter sensitive elements, in particular to a 7600nm long-wave infrared filter sensitive element. Background technique [0002] Infrared thermal imager (thermal imager or infrared thermal imager) detects infrared energy (heat) through non-contact and converts it into an electrical signal, and then generates thermal images and temperature values ​​on the display, and can monitor the temperature values A detection device for computing. Infrared thermal imagers (thermal imagers or infrared thermal imagers) are able to accurately quantify or measure detected heat, allowing you not only to observe thermal images, but also to accurately identify and rigorously analyze heat-producing fault areas. [0003] The detector of the infrared thermal imager is the key to realize the conversion of infrared energy (thermal energy) into electrical signals. Since the infrared energy (thermal energy) emitted by various organi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/20
CPCG02B5/208
Inventor 吕晶胡伟琴王继平
Owner MULTI IR OPTOELECTRONICS