Heterostructure material with orbital and charge ordering transition and anisotropic field resistance effect, preparation method and purpose thereof

Abstract

The invention discloses heterostructure material with orbital and charge ordering characteristic and anisotropic field resistance effect. The heterostructure material comprises (011) or an oblique PMN-PT single crystal substrate thereof and a perovskite manganese oxide film grown thereon in an epitaxial growth mode, wherein the lattice mismatch between the substrate and film is 1-6%. The heterostructure material with the orbital and charge ordering transition and anisotropic field resistance effect realizes the orbital and charge ordering transition in the film through leading in the large anisotropic strain in the surface. The formed orbital and charge ordering arrangement is sensitive to an external bias field, the film resistance is greatly lowered under the effect of the bias field, a low-temperature zone generates a large anisotropic field resistance effect higher than a magnetic resistance, and the field resistance amplitude can be regulated conveniently to meet the actual application requirements through controlling the film thickness, and the bias field size and polarity. The heterostructure material is featured with simple preparation technique, low power consumption, convenience and easiness in operation and the like, and the heterostructure material is good for apparatus development and application.

Description

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AI Technical Summary

Benefits of technology

The present inventors have developed a new type of structure called Perovski-Type Manganium Oxynitride (PMON). These structures are very useful because they allow for precise control over how charges move within them without being affected negatively from outside influences such as electrical fields. They also provide great flexibility when designing electronic devices due to their ability to change resistive properties based upon externally applied stress. Overall, these technical features make it possible to create highly functional electronics through various techniques like growth of nanoparallel plates onto a specific surface.

Problems solved by technology

This patented technical problem addressed in this patents relates to improving the performance of electronic components used within quantum computing systems due to the ability to efficiently manipulate charged states with different types of orders depending upon environmental variables like voltage potential difference across layers. Specifically, current methods cannot achieve precise alignment of charges along certain directions when changing them from one valence level to another.

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