Heterostructure material with orderly transition of charge orbit and anisotropic field resistance effect and its preparation method and application

Abstract

The present invention provides a heterogeneous structure material with ordered characteristics of charge orbits and anisotropic field resistance effect. The heterostructure material comprises: (011) or its obliquely oriented PMN-PT single crystal substrate and A perovskite manganese oxide thin film epitaxially grown thereon, wherein the lattice mismatch between the substrate and the thin film is 1-6%. The invention realizes orderly transition of electric charge track in the thin film by introducing large anisotropic tensile strain in the plane. The orderly arrangement of the formed charge orbits is sensitive to the applied bias electric field, which shows that the film resistance under the action of the bias electric field drops significantly, and the low temperature region produces a large anisotropic field resistance effect higher than the magnetoresistance. By controlling the film thickness, The magnitude and polarity of the bias electric field can easily adjust the magnitude of the field resistance to meet the needs of practical applications. The heterostructure material has the characteristics of simple preparation process, low power consumption, convenient and easy operation, etc., which is beneficial to device development and application.

Description

technical field [0001] The invention relates to a perovskite manganese oxide film with a charge orbit order and a large anisotropic field induced by growing a (011) oriented perovskite manganese oxide film on a relaxed ferroelectric single crystal substrate (PMN-PT). Heterostructure material with resistance effect and its preparation method and use. Background technique [0002] Based on the strong coupling between multiple degrees of freedom such as charge, orbit, spin and lattice, ABO 3 type perovskite type manganese oxide Re 1-x Ae x MnO 3 (Re=La, Ce, Pr, etc., Ae=Ca, Sr, Ba, etc.) have complex electromagnetic and structural phase diagrams and various interesting physical phenomena, such as giant magnetoresistance effects, charge, spin, and orbital ordering phenomena , Jahn-Teller distortion, metal-insulator phase transition, phase separation, etc., involve many basic problems in condensed matter physics. The ordering of charge orbitals is one of the most interesting...

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Problems solved by technology

However, the only currently available on SrTiO 3 Growth of Charge Orbital Ordered Nd on Single Crystal 0.5 Sr 0.5 MnO 3 and Pr 0.5 Sr 0.5 MnO 3 In the case of a thin film, it is impossible to effectively control the ordered phase of its charge orbit without a magnetic field, which is very unfavorable for practical applications.

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