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Optical sensing unit, touch panel and manufacturing method thereof, and display device

A manufacturing method and optical sensing technology are applied in the fields of display devices, touch panels and manufacturing methods thereof, and optical sensing units, and can solve the problem of increasing process complexity and manufacturing cost, reading poor photocurrent of thin film transistors, and affecting electrical signals. correctness, etc.

Active Publication Date: 2017-10-20
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The photosensitive thin film transistor needs to feel the external light, therefore, the photosensitive thin film transistor must be able to irradiate the external light; but the reading thin film transistor cannot be exposed to the external light, otherwise the reading thin film transistor will generate bad photocurrent, which will affect the read out. The correctness of the electrical signal, so for the touch panel, it is necessary to design a black matrix to block the active layer of the read thin film transistor and prevent external light from shining on the active layer of the read thin film transistor
If the optical sensing unit is integrated in the display panel, the active layer of the read thin film transistor can be blocked by using the black matrix of the display panel itself, but if the optical sensing unit is not integrated in the display panel, an additional special black matrix needs to be designed. matrix to cover the active layer of the read thin film transistor, increasing process complexity and manufacturing cost

Method used

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  • Optical sensing unit, touch panel and manufacturing method thereof, and display device
  • Optical sensing unit, touch panel and manufacturing method thereof, and display device
  • Optical sensing unit, touch panel and manufacturing method thereof, and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] This embodiment provides a method for manufacturing an optical sensing unit, the optical sensing unit includes a photosensitive thin film transistor, a storage capacitor for storing the leakage current of the photosensitive thin film transistor, and reading an electrical signal stored in the storage capacitor A read thin film transistor, the fabrication method comprising:

[0039] A gate electrode of the read thin film transistor capable of shielding the active layer of the read thin film transistor and preventing external light from irradiating the active layer is formed.

[0040] The optical sensing unit produced in this embodiment includes a photosensitive thin film transistor, a storage capacitor for storing the leakage current of the photosensitive thin film transistor, and a readout thin film transistor for reading the electrical signal stored in the storage capacitor, wherein the gate electrode of the readout thin film transistor can Block the active layer of the...

Embodiment 2

[0047] The embodiment of the present invention also provides an optical sensing unit, which is manufactured by the above-mentioned manufacturing method, and the gate electrode of the reading thin film transistor can block the active layer of the reading thin film transistor to prevent external light onto the active layer.

[0048] The optical sensing unit of this embodiment includes a photosensitive thin film transistor, a storage capacitor for storing the leakage current of the photosensitive thin film transistor, and a reading thin film transistor for reading the electrical signal stored in the storage capacitor, wherein the gate electrode of the reading thin film transistor can block Read the active layer of the thin film transistor and prevent external light from shining on the active layer, so that the active layer of the read thin film transistor can be blocked by using the gate electrode of the read thin film transistor itself, and no additional black matrix is ​​require...

Embodiment 3

[0050] An embodiment of the present invention also provides a method for manufacturing a touch panel, including: forming the optical sensing unit on a base substrate by using the above-mentioned manufacturing method.

[0051] In the touch panel made in this embodiment, the gate electrode of the read thin film transistor can block the active layer of the read thin film transistor and prevent external light from shining on the active layer, so that the gate electrode of the read thin film transistor itself can To shield the active layer of the read thin film transistor, there is no need to make an additional black matrix to shield the active layer of the read thin film transistor.

[0052] Further, the manufacturing method further includes: forming a pixel thin film transistor on the base substrate.

[0053] Further, in order to reduce the patterning process, the manufacturing method includes:

[0054] The source electrode of the photosensitive thin film transistor, the drain e...

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PUM

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Abstract

The invention provides an optical sensing unit, a touch panel, a manufacturing method thereof, and a display device, belonging to the technical field of touch. Wherein, the optical sensing unit includes a photosensitive thin film transistor, a storage capacitor for storing the leakage current of the photosensitive thin film transistor, and a reading thin film transistor for reading electrical signals stored in the storage capacitor, and the manufacturing method includes: forming The gate electrode of the read thin film transistor capable of shielding the active layer of the read thin film transistor and preventing external light from irradiating the active layer. The technical scheme of the present invention can use the gate electrode of the read TFT to shield the active layer of the read TFT, without additionally making a black matrix to shield the active layer of the read TFT.

Description

technical field [0001] The invention relates to the field of touch technology, in particular to an optical sensing unit, a touch panel, a manufacturing method thereof, and a display device. Background technique [0002] The touch panel in the prior art mainly uses an optical sensing unit to determine the touch position. The mainstream optical sensing unit generally includes two thin film transistors (TFT) and a storage capacitor, one of which is a photosensitive (Photo) thin film transistor, Another thin film transistor is a readout thin film transistor. When the optical sensing unit is irradiated with light, the photosensitive thin film transistor will always generate a leakage current and store it in the storage capacitor next to it, and the reading thin film transistor will be turned on once every photosensitive period to read out the electrical signal stored in the storage capacitor, through The light condition of the photosensitive thin film transistor can be known by ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/042H10N97/00
CPCG06F3/0412H01L29/4908H01L27/1225H01L27/1251H01L27/1255G06F3/042H01L27/1443H01L29/78633H01L29/66969G06F2203/04103H01L29/78693
Inventor 吴俊纬李重君王延峰徐晓光
Owner BOE TECH GRP CO LTD