Optical sensing unit, touch panel and manufacturing method thereof, and display device
A manufacturing method and optical sensing technology are applied in the fields of display devices, touch panels and manufacturing methods thereof, and optical sensing units, and can solve the problem of increasing process complexity and manufacturing cost, reading poor photocurrent of thin film transistors, and affecting electrical signals. correctness, etc.
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Embodiment 1
[0038] This embodiment provides a method for manufacturing an optical sensing unit, the optical sensing unit includes a photosensitive thin film transistor, a storage capacitor for storing the leakage current of the photosensitive thin film transistor, and reading an electrical signal stored in the storage capacitor A read thin film transistor, the fabrication method comprising:
[0039] A gate electrode of the read thin film transistor capable of shielding the active layer of the read thin film transistor and preventing external light from irradiating the active layer is formed.
[0040] The optical sensing unit produced in this embodiment includes a photosensitive thin film transistor, a storage capacitor for storing the leakage current of the photosensitive thin film transistor, and a readout thin film transistor for reading the electrical signal stored in the storage capacitor, wherein the gate electrode of the readout thin film transistor can Block the active layer of the...
Embodiment 2
[0047] The embodiment of the present invention also provides an optical sensing unit, which is manufactured by the above-mentioned manufacturing method, and the gate electrode of the reading thin film transistor can block the active layer of the reading thin film transistor to prevent external light onto the active layer.
[0048] The optical sensing unit of this embodiment includes a photosensitive thin film transistor, a storage capacitor for storing the leakage current of the photosensitive thin film transistor, and a reading thin film transistor for reading the electrical signal stored in the storage capacitor, wherein the gate electrode of the reading thin film transistor can block Read the active layer of the thin film transistor and prevent external light from shining on the active layer, so that the active layer of the read thin film transistor can be blocked by using the gate electrode of the read thin film transistor itself, and no additional black matrix is require...
Embodiment 3
[0050] An embodiment of the present invention also provides a method for manufacturing a touch panel, including: forming the optical sensing unit on a base substrate by using the above-mentioned manufacturing method.
[0051] In the touch panel made in this embodiment, the gate electrode of the read thin film transistor can block the active layer of the read thin film transistor and prevent external light from shining on the active layer, so that the gate electrode of the read thin film transistor itself can To shield the active layer of the read thin film transistor, there is no need to make an additional black matrix to shield the active layer of the read thin film transistor.
[0052] Further, the manufacturing method further includes: forming a pixel thin film transistor on the base substrate.
[0053] Further, in order to reduce the patterning process, the manufacturing method includes:
[0054] The source electrode of the photosensitive thin film transistor, the drain e...
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