growth café 2 Method and device for adjusting temperature field structure by crystal
A technology for growing crystals and crystals, which is applied in the field of growing CaF2 crystals with a diameter greater than 100 mm, and can solve the problems of immaturity in horizontal growth furnace technology
Active Publication Date: 2018-01-09
JILIN SAIER PHOTOELECTRIC TECH
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Problems solved by technology
However, this technology has not solved how the crucible is supported in the horizontal state, and whether the temperature field structure will be changed due to the support. At the same time, there are many problems such as the temperature field stability of the rectangular cross-section crucible in the horizontal state, so it is said that this The horizontal growth furnace and related technologies involved in the invention have not yet matured
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[0026] Adopt the method of the present invention to grow CaF 2 Crystal, the equipment used is a vacuum drop furnace, the inner diameter of the growth furnace is 640mm, and the height of the growth chamber is 130mm. The heating body, crucible and electrodes are made of high-purity graphite. The inner diameter of the graphite crucible is 260mm, and the height is 360mm. The furnace is equipped with a temperature field regulating device manufactured according to the present invention. CaF 2 The crystal raw material is poured into the drum mixer, and 1% by weight of ZnF is added 2 and 1% by weight NH 4 HF 2 , put into the crucible after stirring well, add NH 4 HF 2 The purpose is to prevent the raw material from reacting with the residual oxygen and water in the furnace to form calcium oxide at a low temperature of 100-300°C, adding ZnF 2 The purpose is to prevent the raw materials from reacting with residual oxygen and water in the furnace to form calcium oxide at a high tem...
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Abstract
The invention relates to a method for growing CaF under vacuum conditions by using a descending method 2 Crystal methods and apparatus. When the descending method is used to grow CaF with larger diameter 2 When growing a single crystal, it becomes more and more difficult to effectively control the structure of the temperature field in the crucible. In order to obtain a flat solid-liquid interface or a slightly convex upward solid-liquid interface required for growing high-quality single crystals, an adjustable solid-liquid interface is used. The method and device of the temperature field structure at the liquid interface increase the adjustability of the temperature field at the solid-liquid interface during the crystal growth process. The device consists of a graphite drop rod and a movable stainless steel water-cooled rod inside the graphite drop rod. During the crystal growth process, the temperature field structure at the solid-liquid interface in the crucible can be adjusted by continuously adjusting the relative position of the graphite drop rod and the water-cooled stainless steel rod, so that the solid-liquid interface remains flat or flat during the entire crystal growth process. The upward slightly convex interface can effectively reduce the internal stress of the grown crystal and improve the quality of the crystal.
Description
technical field [0001] The invention belongs to the field of crystal growth, and relates to a method of growing CaF under vacuum conditions by adopting a descending method 2 Method and device for crystal to adjust temperature field structure, especially suitable for growing CaF with diameter larger than 100mm 2 crystals. Background technique [0002] CaF 2 Crystal is an optical material with excellent comprehensive performance. It has a wide light transmission range and can be used in ultraviolet, visible, infrared and other wave bands. In the visible band, the advantages of small chromatic aberration are often used to manufacture high-end camera lenses; in the infrared band, it is often used as an infrared window material; in recent years, due to the development of ultraviolet lithography technology, CaF 2 The application advantages of crystals in the ultraviolet band are becoming more and more prominent. At present, high-end semiconductor lithography equipment uses ultr...
Claims
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IPC IPC(8): C30B29/12C30B11/00
CPCC30B11/003C30B29/12
Inventor 臧春雨臧春和李春
Owner JILIN SAIER PHOTOELECTRIC TECH