Method for adjusting temperature field structure of growing CaF2 crystals, and apparatus thereof
A technology for growing crystals and crystals, which is applied in the field of growing CaF2 crystals with a diameter greater than 100 mm, and can solve the problems of immaturity in horizontal growth furnace technology
Active Publication Date: 2015-06-10
JILIN SAIER PHOTOELECTRIC TECH
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Problems solved by technology
However, this technology has not solved how the crucible is supported in the horizontal state, and whether the temperature field structure will be changed due to the support. At the same time, there are many problems such as the temperature field stability of the rectangular cross-section crucible in the horizontal state, so it is said that this The horizontal growth furnace and related technologies involved in the invention have not yet matured
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[0027] Adopt the method of the present invention to grow CaF 2 Crystal, the equipment used is a vacuum drop furnace, the inner diameter of the growth furnace is 640mm, and the height of the growth chamber is 130mm. The heating body, crucible and electrodes are made of high-purity graphite. The inner diameter of the graphite crucible is 260mm, and the height is 360mm. The furnace is equipped with a temperature field regulating device manufactured according to the present invention. CaF 2 The crystal raw material is poured into the drum mixer, and 1% by weight of ZnF is added 2 and 1% by weight NH 4 HF 2 , put into the crucible after stirring well, add NH 4 HF 2 The purpose is to prevent the raw material from reacting with the residual oxygen and water in the furnace to form calcium oxide at a low temperature of 100-300°C, adding ZnF 2 The purpose is to prevent the raw materials from reacting with residual oxygen and water in the furnace to form calcium oxide at a high tem...
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Abstract
The invention relates to a method for growing CaF2 crystals under vacuum conditions by adopting a descent technology, and an apparatus thereof. The effective control of the temperature field structure in a crucible is difficult to realize when the descent technology is adopted to grow CaF2 crystals with large diameter, so the method for adjusting the temperature field structure at a solid-liquid interface and the apparatus thereof are adopted to increase the adjustability of the temperature field at the solid-liquid interface in the crystal growth process in order to obtain a flat solid-liquid interface or upward dimpling-shaped solid-liquid interface required by the growth of high quality monocrystals. The apparatus comprises a graphite descent rod and a movable stainless steel water cooling rod positioned in the graphite descent rod. The temperature field structure at the solid-liquid interface in the crucible can be adjusted by continuously adjusting the relative position of the graphite descent rod and the stainless steel water cooling rod in the crystal growth process in order to make the solid-liquid interface maintain the flat interface or upward dimpling-shaped interface in the whole crystal growth process, so the internal stress in the growing crystals is effectively reduced, and the quality of the crystals is improved.
Description
technical field [0001] The invention belongs to the field of crystal growth, and relates to a method of growing CaF under vacuum conditions by adopting a descending method 2 Method and device for crystal to adjust temperature field structure, especially suitable for growing CaF with diameter larger than 100mm 2 crystals. Background technique [0002] CaF 2 Crystal is an optical material with excellent comprehensive performance. It has a wide light transmission range and can be used in ultraviolet, visible, infrared and other wave bands. In the visible band, the advantages of small chromatic aberration are often used to manufacture high-end camera lenses; in the infrared band, it is often used as an infrared window material; in recent years, due to the development of ultraviolet lithography technology, CaF 2 The application advantages of crystals in the ultraviolet band are becoming more and more prominent. At present, high-end semiconductor lithography equipment uses ultr...
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IPC IPC(8): C30B29/12C30B11/00
CPCC30B11/003C30B29/12
Inventor 臧春雨臧春和李春
Owner JILIN SAIER PHOTOELECTRIC TECH