Unlock instant, AI-driven research and patent intelligence for your innovation.

Plasma processing cavity and cooling device

A cooling device and processing chamber technology, applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems of waste of resources, bad heat, etc., and achieve the effects of easy cleaning, lower power consumption, and chamber area saving

Active Publication Date: 2015-06-17
ADVANCED MICRO FAB EQUIP INC CHINA
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a position is not good at taking away the heat from the top 106 of the chamber by the cooling device 102, which will cause a certain waste of resources

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma processing cavity and cooling device
  • Plasma processing cavity and cooling device
  • Plasma processing cavity and cooling device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The specific embodiments of the present invention will be described below in conjunction with the accompanying drawings.

[0039] The present invention is applicable to a plasma processing chamber, and the inductively coupled plasma processing chamber will be used as an example for illustration below, but this is not regarded as a limitation of the present invention. Those skilled in the art should understand that the present invention is applicable to any vacuum processing chambers, including plasma processing chambers, such as capacitively coupled plasma processing chambers (CCP) and metal organic vapor deposition (MOCVD) chambers.

[0040] figure 2 It is a structural schematic diagram of a plasma processing chamber and its cooling device according to a specific embodiment of the present invention. figure 2 An inductively coupled plasma processing chamber 200 is shown in accordance with one embodiment of the invention. It should be understood that the inductively ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a plasma processing cavity and a cooling device. The cooling device comprises a hollow-frame-shaped air-out assembly and a power device, a body of the air-out assembly is provided with multiple air-out openings or air-out belts, and the air-out openings or the air-out belts are fixed on a top plate of the plasma processing cavity. A power device is connected with the air-out assembly, and is used for driving the air-out assembly to generate wind power. The cooling device has the advantages of being small in volume, easy to clean, and capable of carrying out temperature control on different areas of the cavity or a chip. The cooling device is particularly applicable to cooling on an insulation top plate of an inductive-coupling-type plasma processing cavity.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a plasma processing chamber and a cooling device thereof. Background technique [0002] The plasma processing chamber uses the working principle of the vacuum reaction chamber to process semiconductor substrates and plasma flat substrates. The working principle of the vacuum reaction chamber is to pass a reaction gas containing an appropriate etchant source gas into the vacuum reaction chamber, and then input radio frequency energy to the vacuum reaction chamber to activate the reaction gas to stimulate and maintain the plasma, so that The material layer on the surface of the substrate is respectively etched or deposited on the surface of the substrate, and then the semiconductor substrate and the plasma plate are processed. [0003] Systematic temperature control of plasma processing chambers is a critical issue. The plasma processing chamber system itself includes m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01J37/02
CPCH01J37/02H01J37/32H01J37/321
Inventor 吴狄何乃明曹雪操
Owner ADVANCED MICRO FAB EQUIP INC CHINA