Resistive memory device and storage unit thereof
A technology of resistive storage and resistance, which is applied in the direction of static memory, digital memory information, electrical components, etc., and can solve the problem of data reading error of resistive memory unit, the resistance value gap of resistive memory unit cannot be kept stable, and the resistance value of resistive memory unit Control instability and other issues to achieve the effect of maintaining performance
Active Publication Date: 2017-09-05
WINBOND ELECTRONICS CORP
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Problems solved by technology
[0004] However, in today's technical field, resistive memory cells still have the problem that the gap between the resistance value of the set (set) and the reset (reset) cannot be kept stable.
The main reason is that the control of the resistance value when the resistive memory cell is reset is relatively unstable.
This phenomenon may cause errors when reading data from resistive memory cells, affecting the reliability of resistive memory
Method used
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Embodiment Construction
[0038] Please refer to figure 1 , figure 1 A schematic diagram of a resistive memory cell according to an embodiment of the present invention is shown. The resistive memory unit 110 includes transistors M1 and M2 and resistors R0_L and R0_R. The transistor M1 has a first terminal, a second terminal and a control terminal, and the transistor M1 may be a metal oxide semiconductor field effect transistor (MOSFET). The second terminal of the transistor M1 (such as its source) is coupled to the reference voltage VS, the control terminal of the transistor M1 (such as its gate) receives the word line signal VG_Sel1, and the first terminal of the transistor M1 (such as its drain) is coupled to Connected to the resistor R0_L, the reference voltage VS can be the source voltage. The transistor M2 has a first terminal, a second terminal and a control terminal, and the transistor M2 may also be a metal oxide semiconductor field effect transistor (MOSFET). The second terminal of the tra...
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A resistive memory device and its storage unit. The resistive memory unit includes a first transistor, a second transistor, a first resistor and a second resistor. The first terminal and the second terminal of the first transistor are respectively coupled to the first bit line and the reference voltage. The first terminal and the second terminal of the second transistor are respectively coupled to the second bit line and the reference voltage. The first resistor is connected in series between the first end of the first transistor and the coupling path of the first bit line or between the second end of the first transistor and the coupling path of the reference voltage. The second resistor is connected in series between the first end of the second transistor and the coupling path of the second bit line or between the second end of the second transistor and the coupling path of the reference voltage.
Description
technical field [0001] The invention relates to a resistive memory and its storage unit. Background technique [0002] With the increasing demand for information, it has become an important trend to configure large-capacity memories in electronic devices. Under the requirement of providing a long-term memory space with sufficient capacity, resistive memory has become a new favorite in the current technical field. [0003] It is a popular trend to use resistive memory as non-volatile memory. The main reason is that the resistive memory has a relatively high writing speed, relatively low operating power consumption, and the manufacture of the resistive memory is fully compatible with current integrated circuit manufacturing technology. [0004] However, in the current technical field, the resistive memory cell still has the problem that the gap between its resistance value cannot be kept stable when it is set (set) and reset (reset). The main reason is that the control of t...
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IPC IPC(8): H01L45/00H01L27/24G11C13/00
Inventor 谢明辉苏源茂苏画羽金宁泰柳德铉
Owner WINBOND ELECTRONICS CORP