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A passivation anti-reflection film for high pid resistant single crystal battery and its preparation process

A passivation reduction and reflective film technology, applied in the field of solar cells, can solve the problems of PID attenuation and battery conversion efficiency reduction, and achieve the effects of increasing short-circuit current, reducing overall refractive index, and increasing anti-PID attenuation characteristics.

Active Publication Date: 2017-05-03
江苏顺风新能源科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The SiNx passivation anti-reflection coating on the surface of traditional solar monocrystalline cells is almost always due to the low refractive index, which leads to serious PID attenuation; in order to pursue PID Free in the current market, the main method is to increase the refractive index of the SiNx coating, but the conversion efficiency of the battery is low. The conventional process reduces 1-2%; another method is to use ozone O3 generated by ultraviolet ionization to oxidize the surface of the silicon wafer to form a thinner SiOx layer or PECVD method to directly deposit a layer of SiOx film on the surface of the silicon wafer to make the battery have a certain PID resistance

Method used

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  • A passivation anti-reflection film for high pid resistant single crystal battery and its preparation process
  • A passivation anti-reflection film for high pid resistant single crystal battery and its preparation process
  • A passivation anti-reflection film for high pid resistant single crystal battery and its preparation process

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Embodiment 1

[0023] 1) Pretreatment of the original silicon wafer, the pretreatment includes processes such as texturing, diffusion and etching in the battery process;

[0024] 2) Using high-voltage ionized or ultraviolet ionized oxygen to form a thin layer of dense SiO on the surface of the single crystal silicon wafer after etching x Layer 1, the refractive index is 1.65, and the film thickness is 0.8nm;

[0025] 3) Use PECVD equipment to coat the remaining film layer on the diffusion surface, cancel the pre-deposition step when coating the film, and coat SiO first x Layer 2, the refractive index is 1.65, and the film thickness is 2nm; then coat the top layer with a single layer of SiN x Layer 3, the refractive index is 2.05, and the film thickness is 75nm;

[0026] 4) Print the back electrode, aluminum back field, positive grid line and positive electrode using the traditional battery printing process, and sinter;

[0027] After testing, it is found that the photoelectric conversion ...

Embodiment 2

[0032] 1) Pretreatment of the original silicon wafer, the pretreatment includes processes such as texturing, diffusion and etching in the battery process;

[0033] 2) Using high-voltage ionized or ultraviolet ionized oxygen to form a thin layer of dense SiOx layer 1 on the surface of the monocrystalline silicon wafer after etching, the refractive index is 1.65, and the film thickness is 0.8nm;

[0034] 3) Use PECVD equipment to coat the remaining film layer on the diffusion surface, cancel the pre-deposition step during coating, and first coat SiOx layer 2 with a refractive index of 1.65 and a film thickness of 20nm; the top layer is a double-layer SiNx layer 3, and the bottom layer SiN has a refractive index 2.15, the film thickness is 20nm, the upper SiN refractive index is 2.05, and the film thickness is 35nm;

[0035] 4) Print the back electrode, aluminum back field, positive grid line and positive electrode using the traditional battery printing process, and sinter;

[0...

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Abstract

The invention relates to a passivating antireflection film of a high PID resistance type monocrystalline cell and a preparation process thereof. The passivating antireflection film comprises a first SiOx layer used as a bottom layer, a second SiOx layer used as a medium layer, and a third SiNx layer used as a top layer, wherein the first SiOx layer, the second SiOx layer and the third SiNx layer are sequentially deposited on the front surface of a monocrystalline chip substrate, and the total film thickness of the first SiOx layer, the second SiOx layer and the third SiNx layer is 65 to 120nm; the refraction rate is 1.9 to 2.2. According to the passivating antireflection film two SiOx film layers are introduced to the bottom layer to effectively reduce the interface state of the silicon chip surface, the surface passivating effect can be improved, the refraction rate of the whole antireflection film can be reduced, and the PID attenuating resisting characteristic of the monocrystalline cell can be greatly improved; singe or a plurality of SiNx layers with different refracting rate have a certain of PID resistance and can greatly reduce the reflecting rate of a light surface of a cell piece; the reflecting rate of short and medium wave sections can be effectively reduced; the short circuit current of the cell piece can be increased.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a passivation anti-reflection film for a single crystal cell with high PID resistance and a preparation process thereof. Background technique [0002] As environmental issues and energy issues have attracted more and more people's attention, solar cells, as a clean energy source, have entered a new stage in their research and development. The PID (potential induced degradation) effect refers to the phenomenon of leakage between the glass and the packaging material in the module under long-term high voltage, which causes the failure of the surface passivation anti-reflection film first, and then the failure of the PN junction, which finally reduces the performance of the module. P-type solar crystalline silicon modules with traditional technology have certain PID failure problems. Therefore, studying PID phenomena and developing PID-free crystalline silicon cells is one of the goals of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168H01L31/18Y02P70/50
Inventor 瞿辉徐春曹玉甲张一源
Owner 江苏顺风新能源科技有限公司
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