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Semiconductor laser made by zinc oxide quantum well hybrid and its manufacturing method

A technology of quantum well hybridization and manufacturing method, which is applied in the field of laser manufacturing to achieve the effect of improving the optical confinement factor, good compatibility, and simple and easy manufacturing process

Active Publication Date: 2018-02-27
XIAN UNIV OF TECH
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  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to provide a semiconductor laser made by zinc oxide quantum well hybridization, which solves the problem of optical limitation on the side of the light-emitting region and leakage current outside the light-emitting region after the non-absorbing window is made by quantum well hybridization technology in the prior art.

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  • Semiconductor laser made by zinc oxide quantum well hybrid and its manufacturing method

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Embodiment 1

[0044] Embodiment 1 is the 808nm strip structure high-power semiconductor laser that utilizes zinc oxide quantum well hybridization to make, and its structure is as follows figure 1 As shown, including the epitaxial wafer, the specific structure of the epitaxial wafer is arranged in order from bottom to top: substrate 1, buffer layer 2, lower confinement layer 3, lower waveguide layer 4, quantum well and quantum barrier region 5, upper waveguide layer 6 , the upper confinement layer 7 and the upper ohmic contact layer 8 . The longitudinal centerline of the upper ohmic contact layer 8 is provided with a strip-shaped light-emitting area 9, and the strip-shaped light-emitting area 9 is surrounded by a zinc oxide film layer grown after the upper ohmic contact layer 8 is corroded. The thickness of the zinc oxide film layer is the same as that of the upper ohmic contact layer. The thicknesses of the layers 8 are equal, and the zinc oxide film layer is divided into a zinc oxide film ...

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Abstract

The invention discloses a semiconductor laser made by using zinc oxide quantum well hybrids, including an epitaxial wafer, a strip-shaped light-emitting area is arranged on the epitaxial wafer, a zinc oxide thin film layer grows on the upper surface of the epitaxial wafer, and the zinc oxide thin film layer is divided into two parts, wherein The first part of the zinc oxide thin film layer induces quantum well mixing to form a non-absorbing window at the optical cavity surface at both ends of the laser. The depth of the non-absorbing window exceeds the active area in the epitaxial wafer. The second part of the zinc oxide thin film layer induces quantum well mixing Refractive index optical waveguide regions are formed at both ends of the laser bar-shaped light emitting region. The invention also discloses a manufacturing method of the semiconductor laser. The invention solves the problem that in the prior art, after the non-absorbing window is made by adopting the quantum well hybrid technology, the optical restriction on the side of the light-emitting region and the leakage current outside the light-emitting region cannot be avoided.

Description

technical field [0001] The invention belongs to the technical field of semiconductor laser equipment, and in particular relates to a semiconductor laser produced by zinc oxide quantum well hybridization, and also relates to a manufacturing method of the laser. Background technique [0002] Semiconductor lasers have become one of the most important semiconductor optoelectronic devices due to their wide range of wavelength selection, small size, low power consumption, high efficiency, good inheritance, and low cost. Among them, high-power semiconductor lasers are widely used in laser storage, laser display, laser printing, material processing, laser marking, biomedicine, medical equipment, space optical communication and other fields. At the same time, they can also be used in laser targeting and laser guidance in the military field. , laser night vision, laser radar, laser fuze, laser weapons, war simulation, etc. High-power semiconductor laser technology covers almost all f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/34
Inventor 林涛张浩卿孙航郭恩民孙锐娟
Owner XIAN UNIV OF TECH
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