Semiconductor laser manufactured by mixed zinc oxide quantum well and manufacturing method of semiconductor laser

Abstract

The invention discloses a semiconductor laser manufactured by mixed zinc oxide quantum well and a manufacturing method of the semiconductor laser. The semiconductor laser comprises an epitaxial wafer; a strip-shaped lighting area is formed in the epitaxial wafer; an zinc oxide film layer develops on the upper surface of the epitaxial wafer and is divided into two parts, wherein the first part is used for inducing zinc oxide quantum well to mix and then forming non-absorbing windows in light outgoing cavity surfaces at two ends of the laser; the depth of the non-absorbing windows exceeds that of an active source in the epitaxial wafer; the second part is used for inducing zinc oxide quantum well to mix and then forming refraction rate light waveguide areas in two ends of the strip-shaped lighting area of the laser. The invention further discloses a manufacturing method of the semiconductor laser. With the adoption of the semiconductor laser, the problem that the side surface optical limitation and external electricity leakage of the lighting area cannot be avoided after manufacturing the non-absorbing windows by the quantum well mixing technology in the prior art can be solved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor laser equipment, and in particular relates to a semiconductor laser produced by zinc oxide quantum well hybridization, and also relates to a manufacturing method of the laser. Background technique [0002] Semiconductor lasers have become one of the most important semiconductor optoelectronic devices due to their wide range of wavelength selection, small size, low power consumption, high efficiency, good inheritance, and low cost. Among them, high-power semiconductor lasers are widely used in laser storage, laser display, laser printing, material processing, laser marking, biomedicine, medical equipment, space optical communication and other fields. At the same time, they can also be used in laser targeting and laser guidance in the military field. , laser night vision, laser radar, laser fuze, laser weapons, war simulation, etc. High-power semiconductor laser technology covers almost all f...

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Problems solved by technology

[0007] The purpose of the present invention is to provide a semiconductor laser made by zinc oxide quantum well hybridization, which solves the problem of optical limitation on the side of the light-emitting region and leakage current outside the light-emitting region after the non-absorbing window is made by quantum well hybridization technology in the prior art.

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