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CMOS (complementary metal oxide semiconductor) focal plane reading-out circuit and signal reading-out control method

A technology of readout circuit and focal plane, applied in the field of CMOS focal plane readout technology, can solve the problems of difficult sampling output of sampling unit, weak and submerged optical signal output of pixel output, etc., to achieve the effect of extending dynamic range and improving sensitivity

Active Publication Date: 2015-07-01
THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The problem existing in the prior art is: in the existing focal plane imaging system, multiple pixels in the focal plane array and the sampling unit adopt a one-to-one correspondence connection mode, that is, the output signal of one pixel is processed by one sampling unit; In some occasions, it may appear that the photo-generated signal output by the pixel is relatively weak. At this time, the weak photo-generated signal may be submerged in the noise of the device, making it difficult for the sampling unit to sample and output it.

Method used

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  • CMOS (complementary metal oxide semiconductor) focal plane reading-out circuit and signal reading-out control method
  • CMOS (complementary metal oxide semiconductor) focal plane reading-out circuit and signal reading-out control method
  • CMOS (complementary metal oxide semiconductor) focal plane reading-out circuit and signal reading-out control method

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Embodiment Construction

[0016] A CMOS focal plane readout circuit, comprising a two-dimensional focal plane array composed of a plurality of picture elements and a CMOS focal plane readout circuit composed of a plurality of sampling units; the sampling units correspond to the picture elements one by one, and the sampling units The input terminal and the pixel output terminal are electrically connected through a sampling channel; the sampling channel is provided with an input switch; its innovation lies in:

[0017] The position of a certain pixel in the two-dimensional focal plane array is expressed by the mark Celln,m, where n represents the number of rows of the pixel in the two-dimensional focal plane array, and m represents the position of the pixel in the two-dimensional focal plane array. The number of columns in the array; then the output terminal of the pixel marked as Celln,m is respectively connected with the cell marked as Celln-1,m, Celln+1,m, Celln,m-1 and Celln,m+ through four connecting...

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Abstract

The invention discloses a CMOS (complementary metal oxide semiconductor) focal plane reading-out circuit. The CMOS focal plane reading-out circuit is creatively characterized in that position of a certain pixel in a two-dimensional focal plane array is expressed by using a mark Celln,m, wherein n refers to number of a row where the pixel is positioned in the two-dimensional focal plane array, and m refers to number of a column where the pixel is positioned in the two-dimensional focal plane array; an output end of the pixel marked as Celln,m is electrically connected with output ends of four pixels marked as Celln-1, Celln+1, Celln,m-1 and Celln,m+1; a connecting switch is arranged on a connecting lead. The CMOS focal plane reading-out circuit has the advantages that selective flow-in of photo-generated current output by the pixel to a sampling unit can be realized through a switch, sensitivity of a focal plane imaging system is improved, and dynamic range of the focal plane imaging system is expanded.

Description

technical field [0001] The invention relates to a CMOS focal plane readout technology, in particular to a CMOS focal plane readout circuit and a signal readout control method. Background technique [0002] The focal plane imaging system consists of two parts, the focal plane imaging device (namely the focal plane array) and the focal plane readout circuit. The basic principle is: the photo-generated current generated by the pixel on the focal plane array is conducted to the sampling unit of the readout circuit through the indium column, and the photo-generated current signal is sampled by the sampling unit and integrated, then converted into a corresponding voltage signal, and then passed through The subsequent column-level processing circuit buffers the readout and finally forms the image; common sampling units in the prior art such as capacitive feedback transimpedance amplifier (CTIA) sampling unit, direct injection (DI) sampling unit, source follower type (SFD) Sampling...

Claims

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Application Information

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IPC IPC(8): H04N5/378H04N5/374
Inventor 李毅强刘昌举吴治军李明祝晓笑
Owner THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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