Overlay alignment mark and overlay measuring method

A technology for aligning marks and markings, applied in the field of semiconductors, can solve problems such as poor measurement accuracy, and achieve the effect of improving measurement accuracy

Active Publication Date: 2015-07-15
WUHAN XINXIN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] An object of the present invention is to provide an overlay alignment mark and an overlay

Method used

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  • Overlay alignment mark and overlay measuring method
  • Overlay alignment mark and overlay measuring method
  • Overlay alignment mark and overlay measuring method

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[0027] Hereinafter, the over-engraving alignment mark and over-engraving measurement method of the present invention will be described in more detail in conjunction with the schematic diagrams. Preferred embodiments of the present invention are shown. It should be understood that those skilled in the art can modify the present invention described here and still The advantageous effects of the present invention are achieved. Therefore, the following description should be understood to be widely known to those skilled in the art, and not as a limitation to the present invention.

[0028] For clarity, not all features of actual embodiments are described. In the following description, well-known functions and structures are not described in detail because they may confuse the present invention due to unnecessary details. It should be considered that in the development of any actual embodiment, a large number of implementation details must be made to achieve the developer's specific ...

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Abstract

The invention discloses an overlay alignment mark and an overlay measuring method. By utilizing the overlay alignment mark provided by the invention, a clearance is existent between a front layer mark and a current layer mark in a first direction and a second direction vertical to each other. When performing overlay measurement, through measuring the distance between the front layer mark and the bottom of the current layer mark in the first direction and the second direction, and then subtracting a predetermined distance from the measured distance, to obtain the offset. With the distance measurement, the dependency on an overlay table in the prior art is changed, the problem that the capture of boundary signal of the overlay table is inaccurate when the current layer mark is too thick is avoided, and therefore the measurement accuracy is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an overlay alignment mark and an overlay measuring method. Background technique [0002] In the semiconductor manufacturing process, the photolithography process has been developed as the core technology of each technology generation. In the standard CMOS process, dozens of photolithography steps are required, and the factors affecting the error of the photolithography process are not only the resolution of the photolithography machine, but also the accuracy of alignment. That is to say, each layer must be aligned with the previous layer within a certain range, that is, the overlay (OVL) accuracy must meet the design requirements. [0003] Such as figure 1 As shown, in the prior art, the overlay measurement is to use the measuring equipment to capture the boundary signal 2 of the overlay mark 1, so as to know whether the alignment is accurate. [0004] In the photolitho...

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Application Information

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IPC IPC(8): G03F9/00
Inventor 周绍顺
Owner WUHAN XINXIN SEMICON MFG CO LTD
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