Preparation method for TEM sample

Abstract

The invention provides a preparation method for a TEM sample. The preparation method at least comprises the following steps: providing a semiconductor structure, wherein the semiconductor structure includes a target detection area which comprises, from bottom to top, a first target layer, a narrow gap and a second target layer; forming a through hole in the part of the semiconductor structure located at at least one side of the target detection area; depositing a metal connection layer used for connection of the first target layer and the second target layer on the sidewall of the target detection area; separating the target detection area; and taking out the target detection area, fixing the target detection area on a TEM fixed part and removing the metal connection layer. According to the invention, through deposition of the metal connection layer on the sidewall of the target detection area, positional movement of the first target layer and the second target layer due to existence of the narrow gap between the first target layer and the second target layer during cutting of the sample is avoided, and the target detection area can be conveniently taken out from a semiconductor device after cutting.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a TEM sample. Background technique [0002] In the semiconductor manufacturing industry, there are a variety of inspection equipment, among which EM is an important tool for inspecting the morphology, size and characteristics of the thin films that make up the device. Commonly used EMs include TEM (Transmission Electron Microscope) and SEM (Scanning Electron Microscope). The working principle of TEM is to thin the sample to be tested by cutting, grinding, ion thinning, etc., and then put it into the TEM observation room, irradiate the sample with a high-voltage accelerated electron beam, enlarge the shape of the sample, and project it on the screen. One of the outstanding advantages of TEM is that it has a high resolution and can observe the shape and size of extremely thin films. [0003] In the manufacturing process of semiconductor ...

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for preparing a TEM sample, which is used to solve the problem that the position of the upper and lower layers is prone to shift during the preparation of the sample in the prior art, and the upper and lower layers are cut after cutting. The problem of not being easy to take out from the semiconductor device

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