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LDO circuit applied to HSIC connector whole chip integration

A circuit and interface technology, which is applied in the field of LDO circuit for full-chip integration of HSIC interface, can solve the problems of adding chip pins and external components, and achieve the effect of improving response speed, saving external capacitor components, and fast response speed

Inactive Publication Date: 2015-07-22
SHANGHAI HUAHONG INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This implementation method can obtain a stable 1.2V voltage, but its disadvantage is that an external filter capacitor is required, which increases the number of chip pins and external components.

Method used

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  • LDO circuit applied to HSIC connector whole chip integration
  • LDO circuit applied to HSIC connector whole chip integration

Examples

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Embodiment Construction

[0017] Aiming at the application requirements of the HSIC interface, the present invention proposes a full-chip integrated LDO circuit. see figure 1 As shown, the LDO circuit applied to the full-chip integration of the HSIC interface, in the following embodiments, adopts a fully integrated filter capacitor, including: an error amplifier OP1, a matching NMOS transistor M1, a gate filter capacitor C1, and a Matching current source IREP, a power NMOS transistor M0, an output stage filter capacitor C0, and an NMOS transistor M2; among them, the error amplifier OP1, matching NMOS transistor M1, gate filter capacitor C1, and matching current source IREP form the low-frequency control loop of the LDO circuit Road; the power NMOS transistor M0 is used as the output stage of the LDO circuit, and the NMOS transistor M2 is a high-speed response tube, which is used as the load of the LDO circuit.

[0018] The error amplifier OP1 is an operational amplifier, its positive input terminal in...

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PUM

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Abstract

The invention discloses an LDO circuit applied to HSIC connector whole chip integration. The LDO circuit comprises an error amplifier, a matched NMOS transistor, a grid electrode filter capacitor, a matched current source, a power NMOS transistor, an output stage filter capacitor and an NMOS transistor. The error amplifier, the matched NMOS transistor, the grid electrode filter capacitor and the matched current source form a low-frequency control loop of the LDO circuit. The power NMOS transistor serves as the output stage of the LDO circuit. The NMOS transistor is a high-speed response pipe and serves as the load of the LDO circuit. By means of the LDO circuit, external capacitor elements can be omitted, and wiring of a PCB is facilitated; the response speed is high.

Description

technical field [0001] The invention relates to an LDO (low dropout regulator) circuit, in particular to an LDO circuit applied to full-chip integration of HSIC interfaces. Background technique [0002] HSIC (high speed inter-chip USB high-speed inter-chip interface) is an interface protocol introduced in 2007 for high-speed interconnection between chips. HSIC is proposed on the basis of USB2.0. HSIC utilizes 240M DDR (double rate) signals synchronous with 2-wire sources to provide high-speed 480Mbps (megabit / second) USB (universal serial bus) transmission. HSIC can be widely used in board-level chip-level interconnection, replacing low-speed interfaces such as I2C (two-wire serial bus), SPI (serial peripheral interface), and realizing high-speed interconnection between chips. Compared with USB, HSIC has an output interface of 1.2VLVCMOS (Low Voltage Complementary Metal Oxide Semiconductor) level. For the 0.18μm process, the chip's CORE (core) supply voltage is 1.8V, and ...

Claims

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Application Information

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IPC IPC(8): G05F1/56
Inventor 彭瑱李宏斌易金刚
Owner SHANGHAI HUAHONG INTEGRATED CIRCUIT
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