Quality evaluation method for polycrystalline silicon ingot

Abstract

The present invention belongs to the technical field of photovoltaic solar product detection, and particularly relates to a quality evaluation method for a polycrystalline silicon ingot. The quality evaluation method for the polycrystalline silicon ingot comprises the steps of: (1) dividing the polycrystalline silicon ingot into silicon blocks by the extraction of a root; (2) carrying out minority lifetime scanning on the surfaces of the silicon blocks; (3) acquiring and processing scanned data; (4) bringing the processed data in a specific formula so as to calculate a quality score; (5) considering the influence of impurity areas at the edge of the silicon ingot, introducing partition parameters, and calculating a final comprehensive quality score; and (6) evaluating and grading the quality of the silicon blocks. Through the adoption of the quality evaluation method for thepolycrystalline silicon ingot, the final comprehensive quality score of the silicon blocks can be quickly and accurately obtained through calculation, and the quality can be evaluated, so that the quality of the product can be visually and quantitatively evaluated and managed; the quality evaluation method is suitable for the accurate grading of the quality of the polycrystalline silicon ingot product; the guidance significance is provided for the efficiency prediction of the polycrystalline silicon ingot; and the error rate of purchasing the product is reduced.

Description

(1) Technical field [0001] The invention belongs to the technical field of photovoltaic solar energy product detection, and in particular relates to a method for judging the quality of solar-grade polycrystalline silicon ingots. (2) Background technology [0002] The quality of solar-grade polycrystalline silicon ingots is preliminarily judged only by detecting the average resistivity and average minority carrier lifetime of silicon blocks before making cells, but the influence of crystal growth morphology and crystal defects on quality is not considered. If the quality judgment of the silicon block is handed over to the on-site inspectors to judge with the naked eye, this judgment method is obviously different depending on the experience of the inspectors, and there is a defect that the judgment standard is not data-based, which will inevitably lead to low quality judgment efficiency and inaccurate judgment. accurate question. In this way, when the polycrystalline silicon ...

AI Technical Summary

Problems solved by technology

[0002] The quality of solar-grade polycrystalline silicon ingots is preliminarily judged only by detecting the average resistivity and average minority carrier lifetime of the silicon block before making cells, but the influence of crystal growth morphology and crystal defects on quality is not considered

If the quality judgment of the silicon block is handed over to the on-site inspectors to judge with the naked eye, this judgment method is obviously different depending on the experience of the inspectors, and there is a defect that the judgment standard is not data-based, which will inevitably lead to low quality judgment efficiency and inaccurate judgment. accurate question

In this way, when the polycrystalline silicon ingots of this kind of judgment level are used for the corresponding manufacturers to make cells, the production effect and the quality of the cells often deviate from the quality of the cells that should be produced by the polycrystalline silicon ingots of the above-mentioned method of judgment grades, which increases the manufacturer’s performance. Procurement error rate, so cell manufacturers return the purchased polysilicon ingots, resulting in the production of polysilicon ingots being very passive, resulting in a lot of manpower, material and financial losses

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