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Semiconductor device measurement method

A device measurement and semiconductor technology, which is applied in the field of semiconductor technology, can solve the problems of short service life of components and large loss of measurement lamps, and achieve the effect of improving stability, improving service life, and avoiding the purchase and replacement of light source components

Active Publication Date: 2015-09-02
CSMC TECH FAB2 CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a semiconductor device measurement method to solve the problems of large loss of measurement lamps and short service life of components in the existing semiconductor device measurement

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  • Semiconductor device measurement method
  • Semiconductor device measurement method
  • Semiconductor device measurement method

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Embodiment Construction

[0019] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0020] see figure 1 , the present invention provides a semiconductor device measurement method, comprising:

[0021] Step S1: forming a photoresist layer on the semiconductor device after etching, wherein the outer surface of the photoresist layer is coated with polymer produced during the etching process.

[0022] In this embodiment, the etching is a technique of removing materials by chemical reaction or physical impact. Etching t...

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Abstract

The invention provides a semiconductor device measurement method. Because a photoresist layer forms on an etched semiconductor device, wherein the external surface of the photoresist layer is packaged by a polymer generated in the etching process, the semiconductor device measurement method comprises a step of pre-processing the semiconductor device through a plasma which corresponds with the material of the polymer, thereby peeling the polymer which packages the external surface of the photoresist layer; and measuring the semiconductor device after preprocessing by the plasma by means of measuring light source equipment, thereby greatly improving light strength stability of the measuring light source equipment, greatly prolonging service life of light source components such as a lens, and preventing existing high-cost payment in frequent purchasing and replacement of light source components, worktable stoppage, etc.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a method for measuring a semiconductor device. Background technique [0002] Etching is an indispensable part in the field of semiconductor manufacturing and processing. In the current semiconductor manufacturing (FAB) polysilicon semiconductor etching process, different gases and silicon reactions will generate a variety of polymers (polymers), and some easily volatile polymers are The pump is pumped away, and another part of the polymer that is difficult to volatilize is deposited on the surface of the residual photoresist of the wafer. The polymers generated by chlorine (Cl2) and fluorocarbons (CFx) as reactive gases have better volatility, and the polymers generated by hydrogen bromide (HBr) as reactive gases are relatively less volatile. [0003] When the polysilicon is etched and the thickness is measured, since the core components of the optical path and ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
Inventor 周耀辉
Owner CSMC TECH FAB2 CO LTD