A kind of growth method of light-emitting diode epitaxial wafer and epitaxial wafer

Abstract

The invention discloses a growing method of an epitaxial wafer of a light emitting diode and the epitaxial wafer, and belongs to the field of semiconductor technology. The growing method comprises steps of growing a low-temperature buffering layer, a non-doping GaN layer, an N type layer, a high-temperature active layer, a low-temperature active layer, an electronic blocking layer and a P type layer on a substrate, wherein growing temperature and growing speed of a low-temperature InGaN trap layer are lower than those of a high-temperature InGaN trap layer; growing temperature and growing speed of a low-temperature GaN barrier layer are lower than those of a high-temperature GaN barrier layer; the thickness of the low-temperature InGaN trap layer is larger than that of the high-temperature InGaN trap layer; the thickness of the low-temperature GaN barrier layer is higher than that of the high-temperature GaN barrier layer; the V / III ratio of the low-temperature InGaN trap layer is different from that of the low-temperature GaN barrier layer; and the V / III ratio of the high-temperature InGaN trap layer is the same as that of the high-temperature GaN barrier layer. According to the invention, light emitting efficiency is high.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a growth method of a light emitting diode epitaxial wafer and an epitaxial wafer. Background technique [0002] LED (Light Emitting Diode, light-emitting diode) is a semiconductor electronic component that can emit light. As a new type of high-efficiency, environmentally friendly, green solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, etc., and is being rapidly and widely used, such as traffic lights, automobiles Interior and exterior lights, urban landscape lighting, mobile phone backlights, outdoor full-color displays, etc. [0003] The epitaxial wafer is an important part of manufacturing LED. The existing epitaxial wafer growth method includes: sequentially growing a low-temperature buffer layer, an undoped GaN layer, an N-type layer, an active layer, and a P-type layer ...

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem of limited luminous efficiency of LEDs in the prior art, an embodiment of the present invention provides a method for growing an epitaxial wafer of a light emitting diode and an epitaxial wafer

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