p-type algan semiconductor material growth method

A growth method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve unfavorable large-scale production and commercial applications, cannot improve the donor compensation effect, cannot increase the magnesium doping concentration, etc. problems, to achieve the effect of improving the interface roughness, reducing the incorporation, and increasing the probability of incorporation

Active Publication Date: 2022-03-29
SUN YAT SEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this method can make good use of the two-dimensional hole gas formed by the band bending of the heterointerface to obtain a higher hole concentration, the superlattice doping cannot increase the doping concentration of magnesium, nor can it improve the donor density. sexual compensation effect
In addition, since the superlattice structure is composed of two semiconductor materials with different bandgap widths alternately stacked and grown, it will have a negative impact on the transport of carriers, light emission or incident absorption in optoelectronic devices; the use of acceptor-donor Co-doping method (High Doped p-Type GaNGrown by Alter native Co-Doping Technique, Mat.Res.Soc.Symp.Proc.Vol.719, 2002), although it can be used by using the Coulomb interaction between the acceptor-donor To effectively reduce the ionization energy of acceptor-doped magnesium atoms, but the growth window of this method is very narrow, it is difficult to realize, and it is not conducive to large-scale production and commercial application

Method used

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Embodiment 1

[0044] Such as image 3 As shown, the epitaxial growth structure of the p-type AlGaN semiconductor material of the present invention includes a substrate 101 , a buffer layer or transition layer 102 , an unintentionally doped layer 103 and an acceptor doped layer (p-type AlGaN semiconductor material layer) 104 . The substrate 101 is a sapphire substrate, a buffer layer 102 is grown on the substrate 101 by a metal organic chemical vapor deposition (MOCVD) epitaxial growth method, and a buffer layer 102 is grown on the buffer layer by a metal organic chemical vapor deposition (MOCVD) epitaxial growth method. The method grows an unintentionally doped AlGaN layer 103 and grows a p-type AlGaN semiconductor material layer 104 on the unintentionally doped AlGaN layer 103 by metal organic chemical vapor deposition (MOCVD) epitaxial growth method.

[0045] In the growth process of this implementation case, ammonia gas is used as the source of group V nitrogen; trimethylgallium is used ...

Embodiment 2

[0057] Such as image 3 As shown, the epitaxial growth structure of the p-type AlGaN semiconductor material of the present invention includes a substrate 101 , a buffer layer or transition layer 102 , an unintentionally doped layer 103 and an acceptor doped layer (p-type AlGaN semiconductor material layer) 104 . The substrate 101 is a silicon carbide substrate, and a buffer layer 102 is sequentially grown on the substrate 101 by a metal organic chemical vapor deposition (MOCVD) epitaxial growth method, and a metal organic chemical vapor deposition (MOCVD) epitaxy method is used on the buffer layer to grow The growth method grows the unintentionally doped AlGaN layer 103 and grows the p-type AlGaN semiconductor material layer 104 on the unintentionally doped AlGaN layer 103 by metal organic chemical vapor deposition (MOCVD) epitaxial growth method.

[0058] In the growth process of this implementation case, dimethylhydrazine nitrogen is used as the source of group V nitrogen; t...

Embodiment 3

[0070] The p-type AlGaN semiconductor material in this embodiment is grown on the AlN material substrate layer with a thickness of 500nm and a growth temperature of 900°C. In the growth process of this embodiment, ammonia gas is used as the source of Group V nitrogen; Gallium-based is used as the source of Group III gallium, and trimethylaluminum is used as the source of Group III aluminum; trimethylindium is used as a surfactant, which specifically includes the following steps:

[0071] Deposition of unintentionally doped AlGaN layer: use hydrogen as the carrier gas, keep the V-group nitrogen source continuously fed, pass through the III-group gallium source, the III-group aluminum source and the triethylindium surfactant, and deposit unintentionally doped AlGaN layer;

[0072] Purge: use hydrogen as the carrier gas, keep the V-group nitrogen source continuously fed, disconnect the III-group gallium source, III-group aluminum source and surfactant for 40s, and purge the surfa...

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Abstract

The invention discloses a growth method of a p-type AlGaN semiconductor material. The semiconductor material is grown by adding the step of "gallium source introduction" in surfactant-assisted magnesium delta doping. The p-type AlGaN semiconductor material During the growth process, ammonia gas or dimethylhydrazine nitrogen is used as the source of Group V nitrogen, trimethylgallium or triethylgallium is used as the source of Group III gallium, and trimethylaluminum or triethylaluminum is used as the source of Group III aluminum. Methylindium or triethylindium is used as the source of Group III indium, collectively referred to as the source of Group III metals, and trimethylindium or triethylindium is also used as a surfactant in the acceptor doped layer. The method of the present invention can improve the crystallization quality, increase the doping concentration of the acceptor-doped magnesium atoms, reduce the ionization energy of the acceptor by enhancing the valence band modulation, and further suppress the self-compensation effect, thereby obtaining high crystal quality and high hole concentration. p-type AlGaN semiconductor material.

Description

technical field [0001] The invention relates to the technical field of epitaxial growth of p-type AlGaN semiconductor materials, in particular to a method for preparing p-type AlGaN semiconductor materials by using surfactant-assisted delta doping. Background technique [0002] The present invention is an improved invention based on the applicant's previously applied and authorized invention patent titled "A Preparation Method for P-type GaN and AlGaN Semiconductor Materials" and patent number 101210396995.9. [0003] Group III nitrides (also known as GaN-based materials), as the third-generation semiconductor materials, have the characteristics of large band gap, direct band gap (high photoelectric conversion efficiency), stable chemical properties, strong thermal conductivity, and high breakdown voltage. Based on this type of semiconductor material, optoelectronic devices with high photoelectric conversion efficiency and high response speed (such as blue-green light-emitti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/223
CPCH01L21/0242H01L21/0254H01L21/0262H01L21/2233
Inventor 江灏邱新嘉
Owner SUN YAT SEN UNIV
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