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Zinc oxide nanomaterial, preparation method thereof, and light-emitting device

A technology of zinc oxide nanometer and zinc oxide, which is applied in the direction of semiconductor devices, electrical components, coatings, etc., can solve the problems of p-type zinc oxide synthesis conditions are harsh, high cost, etc., and achieve large-scale and large-scale production, low cost, The effect of simple process

Active Publication Date: 2020-09-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a zinc oxide nanomaterial and its preparation method, and a light-emitting device, aiming to solve the problem that existing intrinsic zinc oxide is prone to produce various donor-type defects inside, and self-compensation occurs so that p-type zinc oxide is synthesized Harsh conditions and high costs

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  • Zinc oxide nanomaterial, preparation method thereof, and light-emitting device

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preparation example Construction

[0019] The embodiment of the present invention provides a preparation method corresponding to the zinc oxide nanomaterial in the previous embodiment. The preparation method comprises the steps of:

[0020] Step S11: providing a mixed solution in which zinc precursor salt, gallium source and nitrogen source are dissolved.

[0021] In an embodiment of the present invention, the zinc precursor salt is a soluble inorganic zinc salt or a soluble organic zinc salt, including but not limited to at least one of zinc acetate, zinc nitrate, zinc chloride, zinc sulfate, and zinc acetate dihydrate; gallium The source is specifically gallium salt, including but not limited to at least one of gallium nitrate and gallium chloride; the nitrogen source is specifically ammonium salt, including but not limited to at least one of urea, ammonium sulfate, ammonium nitrate and ammonium chloride. Specifically, the zinc precursor salt, the gallium source and the nitrogen source can be dissolved by an...

Embodiment 1

[0034] Embodiment 1: The following uses zinc chloride, gallium chloride, ammonium chloride, methanol, and sodium hydroxide as examples for detailed introduction.

[0035] First, add appropriate amount of zinc chloride, gallium chloride and ammonium chloride to 50ml of methanol to form a solution with a total concentration of 0.5mol / L, wherein the ratio of the molar weight of zinc to the sum of the molar weight of gallium ions and nitrogen ions is 1 : 0.005, the molar ratio of gallium ions to nitrogen ions is 1:3, dissolved under constant temperature stirring at 60°C. Then add dropwise the lye that sodium hydroxide is dissolved in 10ml methanol, wherein, molar ratio OH-: M x+ =2:1(M x+ refers to zinc ions, gallium ions and nitrogen ions), pH = 12, and continued to stir at 60° C. for 4 h to obtain a homogeneous transparent solution. Subsequently, after the solution was cooled, the treated ITO was spin-coated with a homogenizer and annealed at 320°C.

Embodiment 2

[0036] Embodiment 2: The following takes zinc nitrate, gallium nitrate, urea, propanol, and ethanolamine as examples to introduce in detail.

[0037] First, appropriate amount of zinc nitrate, gallium nitrate and urea are added to 50ml of propanol to form a solution with a total concentration of 0.5mol / L, wherein the ratio of the molar amount of zinc to the sum of the molar amounts of gallium ions and nitrogen ions is 1:0.005, The molar ratio of gallium ions to nitrogen ions is 1:3, and they are stirred and dissolved at a constant temperature of 80°C. Then add ethanolamine dropwise and dissolve in 10ml propanol solution (molar ratio ethanolamine:M x+ =2:1), pH=12. Stirring was continued at 80 °C for 2 h to obtain a homogeneous clear solution. Subsequently, after the solution was cooled, the treated ITO was spin-coated with a homogenizer and annealed at 320°C.

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Abstract

Belonging to the field of display devices, the invention provides a zinc oxide nanomaterial, a preparation method thereof and a luminescent device. By means of a donor (gallium)-acceptor (nitrogen) co-doping method, the acceptor level of p-type zinc oxide is enhanced, the hole mobility of the Ga and N co-doped p-type zinc oxide can be increased, the forbidden bandwidth of zinc oxide is reduced, and the self-compensation effect is inhibited, thus affecting the hole transport ability of the material. In addition, the preparation method has the advantages of simple process and low cost, and can realize large-area and large-scale production.

Description

technical field [0001] The invention belongs to the field of display devices, in particular to a zinc oxide nanometer material, a preparation method thereof, and a light emitting device. Background technique [0002] ZnO is a direct bandgap n-type semiconductor material with a wide bandgap of 3.37eV and a low work function of 3.7eV. This band structure characteristic determines that ZnO can be a suitable electron transport layer material; at the same time, its good Electrical conductivity, high visible light transmittance, excellent water-oxygen stability, and mature preparation process make it more and more outstanding in the optoelectronic devices of solution process. [0003] The application of ZnO in the field of optoelectronics depends on the preparation of high-quality n-type and p-type thin films. At present, n-type ZnO with better electrical properties has been obtained by doping. However, intrinsic ZnO is prone to various donor-type defects inside, and the self-co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/34H01L33/14
CPCC03C17/3417C03C2217/216C03C2217/231C03C2218/116H01L33/14
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
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