5results about How to "Realized area" patented technology

The invention discloses a preparation method of a high-transmittance radiation refrigeration film, which comprises the following steps: mixing a transparent resin matrix with a diluted monomer solution, adding an ultraviolet light absorber, a surface additive and a photoinitiator, and carrying out ultrasonic dispersion to obtain a coating liquid; the surface of a transparent polymer base material is coated with the coating liquid, and the coating liquid is irradiated and cured by 365nm ultraviolet light to form the radiation refrigeration film. The visible light transmittance of the obtained film is larger than or equal to 92%, the ultraviolet rejection rate is larger than or equal to 99%, the infrared emissivity in the atmosphere window wave band is larger than or equal to 0.90, and cooling can be effectively achieved through radiation heat dissipation. The surface of the film is hydrophobic, the water contact angle is larger than 90 degrees, and the film has potential self-cleaning maintaining capacity. The method is simple in process, can be quickly cured at room temperature, is suitable for large-area continuous production, and has the advantages of low cost and high industrialization potential.

The invention discloses a preparation method of a bismuth ferrite nano island based on a molecular beam epitaxy method, which comprises the following steps: a substrate is transferred into a molecular beam epitaxy (MBE) growth chamber, and the temperature of the substrate is greater than or equal to the evaporation temperature of a Bi source; the Bi source and the Fe source are heated to the evaporation temperature, and the beam sizes of the Bi source and the Fe source are adjusted; pure ozone is adopted as an epitaxial growth atmosphere, the pressure of the growth chamber is adjusted to 2 * 10 <-6 >-1 * 10 <-5 > Torr, and the Bi source and the Fe source are mixed in the growth chamber for epitaxial growth; and cooling to obtain the bismuth ferrite epitaxial nano island. The invention also discloses the bismuth ferrite nano island obtained by the preparation method and an application of the bismuth ferrite nano island in a ferroelectric memory. According to the preparation method, large-area integration of the bismuth ferrite epitaxial nano island can be realized, introduction of a second phase such as a template is avoided, the process steps are simple, and the preparation efficiency is high; the prepared bismuth ferrite nano island has a good integration level, the nano islands are relatively independent, information can be independently written and erased, the position of a domain wall can be effectively bound, and the service life of a memory is prolonged.

The invention relates to a micro-nano protection array device and a preparation method thereof, and belongs to the field of electromagnetic field protection. The electromagnetic interference protection device solves at least one problem that an existing electromagnetic interference protection device is difficult to meet the protection requirement of a high-density integrated and / or miniaturized electronic system for strong electromagnetic interference and is difficult to meet the protection requirement for narrow-band high-frequency electromagnetic interference. The invention discloses a preparation method of a micro-nano protection array device, the micro-nano protection array device comprises a graphical array structure formed by metal grids, and the preparation method comprises the following steps: S1, providing a sapphire substrate; s2, drawing a layout, and manufacturing a mask plate; s3, coating photoresist, forming a photoresist pattern through photoetching and developing, and depositing a metal strip line on the sapphire substrate; and S4, removing the photoresist to form the metal grid. According to the invention, high-density miniaturization and large-area integration of the electromagnetic protection device are realized, the electromagnetic interference protection capability of a unit area is improved, and the working frequency upper limit of electromagnetic interference protection is improved.

The invention discloses a steel structure paint area intelligent statistical method and system based on artificial intelligence and three-dimensional model fusion. The method comprises the following steps: firstly, extracting an initial surface area of a component from a BIM design model; on the basis of a built-in geometric rule base, coating-free areas such as welding seams, bolt holes, concrete wrapping sections and assembly binding surfaces are automatically recognized and deducted, and a theoretical net area is obtained; after the component is manufactured, a real-time curved surface model is reconstructed through three-dimensional laser scanning, and the area is corrected based on Gaussian curvature integration; in the coating process, an RGB-D camera and a U-Net + + visual model are adopted to recognize defects such as missed coating and sagging, and back projection is carried out on the defects to the quantized area and position of the three-dimensional model; and finally, a multi-dimensional dosage report and a quality early warning work order are automatically generated in combination with paint volume solid component parameters and are pushed to an MES system. According to the method, full-process automatic area statistics and closed-loop quality management are realized, and the precision and the construction digitization level are remarkably improved.

This invention relates to a dynamic random access memory (DRAM) that integrates vertical-channel thin-film transistors (TFTs) and capacitors. The low leakage current of TFTs improves the data retention time of the DRAM, while the vertical channel achieves 4F... 2 The invention also relates to a method for fabricating the aforementioned dynamic random access memory (DRAM).