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89results about How to "Realized area" patented technology

Method for preparing nano-scale pattern substrate for nitride epitaxial growth

The invention relates to the semiconductor technical field and discloses a method for manufacturing a nanometer pattern substrate used for the epitaxial growth of a nitride. The method comprises the followings steps: settling a layer of silicon dioxide or silicon nitride film on a substrate used for the epitaxial growth of the nitride; the silicon dioxide or silicon nitride film is coated with a layer of thin metal layer through vapor deposition; conducting the annealing heat treatment, and forming uniformly distributed nano-scaled metal particles; utilizing the formed nano-scaled metal particles as masks to etch the silicon dioxide or silicon nitride film so as to form a nanometer pattern structure; using the silicon dioxide or silicon nitride film with the nanometer pattern structure as a mask etching substrate to transfer the nanometer pattern structure of the substrate; and etching to remove the silicon dioxide or silicon nitride film, cleaning the substrate, and obtaining the nanometer pattern substrate. The invention can reduce the dislocation density in the epitaxial layer of the nitride, improve the crystal quality of epitaxial materials, improve the performance of devices and help to realize the scaled and large area manufacture.
Owner:UNILUMIN GRP

Method for preparing nano-scale pattern substrate for nitride epitaxial growth

The invention relates to the semiconductor technical field and discloses a method for manufacturing a nanometer pattern substrate used for the epitaxial growth of a nitride. The method comprises the followings steps: settling a layer of silicon dioxide or silicon nitride film on a substrate used for the epitaxial growth of the nitride; the silicon dioxide or silicon nitride film is coated with a layer of thin metal layer through vapor deposition; conducting the annealing heat treatment, and forming uniformly distributed nano-scaled metal particles; utilizing the formed nano-scaled metal particles as masks to etch the silicon dioxide or silicon nitride film so as to form a nanometer pattern structure; using the silicon dioxide or silicon nitride film with the nanometer pattern structure asa mask etching substrate to transfer the nanometer pattern structure of the substrate; and etching to remove the silicon dioxide or silicon nitride film, cleaning the substrate, and obtaining the nanometer pattern substrate. The invention can reduce the dislocation density in the epitaxial layer of the nitride, improve the crystal quality of epitaxial materials, improve the performance of devicesand help to realize the scaled and large area manufacture.
Owner:UNILUMIN GRP

Method for constructing concentric nuclear-shell three-dimensional nano multi-ferroic heterojunction array by ALD

The invention discloses a method for constructing a concentric-nuclear-shell three-dimensional nano multi-ferroic heterojunction array by an ALD. A ZnO nano-wire array grows on a piece of conductive glass; a ferroelectric thin films and a magnetic thin film are deposited successively by using the ZnO nano-wire array as a template according to an atomic layer deposition (ALD) method; and after the ferroelectric thin films and the magnetic thin film that are formed on the top of the ZnO nano-wire array are etched, a metal electrode layer is sputtered on the top of the ZnO nano-wire array, so that a three-dimensional nano multi-ferroic heterojunction array having a concentric nuclear-shell structure is obtained. Therefore, technical problems that the existing multi-ferroic heterojunction only has the planar structure and microminiaturization can not be realized are solved. The method is compatible with the existing leading three-dimensional microelectronic device process and can be operated simply; the price is low; the safety is high and the non-toxic and pollution-free performances are good; and batched production is realized. On the basis of the effective technical scheme and the solution, transition of the multi-ferroic heterojunction from the planar structure to the three-dimensional structure is realized, so that the bottleneck breakthrough of transition from the macro dimension to the micro dimension is realized.
Owner:XI AN JIAOTONG UNIV

Fully integrated multi-output stackable low-dropout regulator (LDO)

The invention discloses a fully integrated multi-output stackable low-dropout regulator (LDO). The fully integrated multi-output stackable low-dropout regulator (LDO) comprises a main LDO and an auxiliary LDO<k>; k is 1,2...n; the main LDO is connected with an on-chip capacitor C<k> and a load Load<k> on an auxiliary LDO<k> circuit through an on-chip capacitor C<0> and a load Load<0> in series, sothat a stacked structure is formed; the main LDO is used for providing current required by the load; the auxiliary LDO<k> is used for stabilizing VOUT<k> voltage; and, when the load current is not same, a I<source> current flowing from VDD<k> to VOUT<k> through MP<k> or a I<sink> current flowing from VOUT<k> to GND through MN<k> is generated. According to the stacked structure in the invention, the output voltage value and the output voltage number can be flexibly adjusted according to load requirements; relatively flexible load requirements are satisfied; due to the three working modes of the auxiliary LDO<k>, voltage current fluctuation due to mismatching between loads can be rapidly adjusted; the dynamic performance of a power supply system is improved; due to the fully integrated structure, system integration is easily carried out; the cost is easily reduced; all output ends, particularly an output end near the GND, have good PSR characteristic; and thus, the LDO is suitable for amodule sensitive to a power supply.
Owner:XI AN JIAOTONG UNIV

Three-dimensional array-intersected array resistive random access memory and method for manufacturing the memory

The invention discloses a three-dimensional array-intersected array resistive random access memory and a method for manufacturing the memory. The three-dimensional array-intersected array resistive random access memory comprises a first resistive random access memory layer region, a second resistive random access memory layer region and a medium separation layer, wherein the medium separation layer is arranged on the first resistive random access memory layer region; the second resistive random access memory layer region is arranged on the medium separation layer; the first resistive random access memory layer region comprises a first transparent glass substrate, a first transparent oxide bottom electrode film layer, a first transparent oxide resistance change layer and a first transparent oxide top electrode film layer; the second resistive random access memory layer region comprises a second transparent oxide bottom electrode film layer, a second transparent oxide resistance change layer and a third transparent oxide top electrode film layer. The memory and the method are low in manufacturing cost, convenient to process, and high in large-area integration level, thus the large-scale three-dimensional array-intersected array resistive random access memory can be manufactured and applied to the transparent electronics.
Owner:PEKING UNIV

SRAM cell and SRAM device

An SRAM cell comprising a first to fourth semiconductor thin plates standing on a single substrate and sequentially arranged parallel to each other, on the first semiconductor thin plate a first four-terminal double gate FET with a first conduction type and a second four-terminal double gate FET with a second conduction type being formed and connected in series to each other, on the second semiconductor thin plate a third four-terminal double gate FET with the second conduction type being formed, on the third semiconductor thin plate a fourth four-terminal double gate FET with the second conduction type is formed, on the fourth semiconductor thin plate a fifth four-terminal double gate FET with the first conduction type and a sixth four-terminal double gate FET with the second conduction type being formed and connected in series to each other. The second and sixth four-terminal double gate FETs constitute select transistors with logic signal input gates thereof being connected to a word line. The first and third four-terminal double gate FETs and the fourth and the fifth four-terminal double gate FETs respectively constitute cross-coupled complementary inverters to realize a flip-flop. The SRAM cell is characterized in that the first four-terminal double gate FET and the third four-terminal double gate FET are neighboring with each other and logic signal input gates thereof are formed on the side surfaces facing to each other of the respective semiconductor thin plates; the fourth four-terminal double gate FET and the fifth four-terminal double gate FET are neighboring with each other and logic input gates thereof are formed on the side surfaces facing to each other of the respective semiconductor thin plates; the third four-terminal double gate FET and the fourth four-terminal double gate FET are neighboring with each other and a threshold voltage control gates thereof are formed on the side surfaces facing to each other of the respective semiconductor thin plates; the second four-terminal double gate FET and the sixth four-terminal double gate FET are neighboring with each other sandwiching the second and third semiconductor thin plates and threshold voltage control gates thereof being formed on side surfaces facing to each other of the respective semiconductor thin plate; the threshold voltage control gates of the second, third, fourth, and sixth four-terminal double gate FETs are connected in common to a first bias wiring; threshold voltage control gates of the first and fifth four-terminal double gate FETs are connected in common to a second bias wiring; and the word line and the first and second bias wirings are arranged in a direction perpendicular to the alignment direction of the first to the fourth semiconductor thin plates.
Owner:NAT INST OF ADVANCED IND SCI & TECH

Stretchable flexible thermoelectric device and manufacturing method thereof

The invention discloses a stretchable flexible thermoelectric device and a manufacturing method thereof. A hot-end or cold-end stretchable electrode array of the stretchable flexible thermoelectric device comprises a plurality of hot-end or cold-end stretchable electrodes arranged in an array. Each hot-end or cold-end stretchable electrode is a flexible copper-clad plate of a sheet-shaped structure. Each hot-end or cold-end stretchable electrode is divided into three parts, the two ends are of structures with the same shape as the bottom surface of the hot end or the cold end of a P-type thermoelectric block or a N-type thermoelectric block, and the middle is of a staggered gap structure. According to the stretchable flexible thermoelectric device and the manufacturing method thereof, the alternate kerf structures are designed and manufactured on the hot-end electrode array and the cold-end electrode array of the flexible thermoelectric device, so that the thermoelectric device has good stretchability; and meanwhile, according to the manufacturing method of the stretchable flexible thermoelectric device, large-area integrated manufacturing and positioning welding of the electrode array are innovatively achieved, the manufacturing cost of the stretchable flexible thermoelectric device is reduced, and the processing efficiency of the flexible thermoelectric device is improved.
Owner:XIDIAN UNIV

Manufacturing method of Stipa plant seed roll and seed roll spreading and sowing method

InactiveCN108207174ASolve the low seedling preservation rate at the seedling stageSolve problems such as intolerance to direct sunlightSeed arrangmentsYarnPlanting seed
The invention discloses a manufacturing method of a Stipa plant seed roll and a seed roll spreading and sowing method. A Stipa collecting net is a seed sticking net formed by weaving multiple coarse wool yarn, short fluff is arranged on the wool yarn for weaving the seed sticking net, a manufactured Stipa collecting net is dragged on the grass, and Stipa seeds are attached to the Stipa collectingnet by long awn of Stipa plant seeds and hard barbs at bottoms of the seeds; the Stipa collecting net with the Stipa seeds is rolled into a cylindrical seed roll with height of 1 m. The seed roll is spread on the surface of finished soil, soil coverage is performed with depth of 1 cm, and irrigating is performed after soil coverage; sowing is selected in the rainy season in areas without irrigation conditions, waiting for precipitation is performed after sowing, and the soil surface is covered with non-woven fabric. Harvesting and sowing of the Stipa plant seeds in a large area are made possible, the problems that the Stipa plant seeds are intolerant to drought at seedling stage, the seedling protection rate is low and the like in production practice are solved, and technical guarantee forrestoration of degraded Stipa steppe is provided.
Owner:GRASSLAND RES INST OF CHINESE ACAD OF AGRI SCI

Adaptive variable-area tail fin underwater propulsion device

The invention relates to the technical field of biomimicry, in particular to an adaptive variable-area tail fin underwater propulsion device. The adaptive variable-area tail fin underwater propulsiondevice comprises a tail fin mounting plate, wherein first shape memory metal is embedded in the tail fin mounting plate, and the other end of the first shape memory metal is fixed to a supporting plate; and the tail fin mounting plate is further connected with a tail fin deformation part, the tail fin deformation part is in an isosceles triangle shape integrally, the tail fin deformation part is provided with waist rods and a bottom rod, and two tail end motion rod parts are connected to the middle part of the bottom rod. The supporting plate is connected to the bottom rod of the tail fin deformation part through two pull rods, one ends of the pull rods are fixed into tip connecting fixing holes of the supporting plate, and the other ends of the pull rods are fixed to the joints of the bottom rod of the tail fin deformation part and the end motion rod parts. According to the adaptive variable-area tail fin underwater propulsion device, various scientific research and production activities such as ocean exploration, ocean protection are facilitated for human beings in the future.
Owner:JIANGSU UNIV OF SCI & TECH

Steel structure special-shaped curved surface welding equipment

The invention relates to the technical field of steel structure welding, in particular to steel structure special-shaped curved surface welding equipment. The steel structure special-shaped curved surface welding equipment comprises a dynamic welding base, a welding platform frame and a welding table, the dynamic welding base is connected with the welding platform frame, and the welding table is arranged above the welding platform frame. A machine box drives a driving rotating shaft to rotate to enable a lower connecting rod to be overturned outside, a left welding rack and a right welding rack are driven to move towards the two sides and move downwards at the same time, the area and the position of the welding table are adjusted, and one-key operation is achieved. The structure is simple, adaptability is high, a switch is triggered after a middle connecting plate is pressed downwards, cold air overflows upwards from an air hole, a special-shaped curved surface steel structure in welding from bottom to top is cooled, the cooling speed of the welding face is increased, sliding of a welding seam material caused by the fact that the special-shaped curved surface steel structure is affected by gravity of different faces in the welding process is prevented, welding seam flatness is optimized, and welding quality is improved; and the position stability of the special-shaped curved surface steel structure is achieved through synchronous stretching and retracting of the output end of a telescopic rod mounting box, and practicability is higher.
Owner:青岛昊宇重工有限公司

Method for artificially culturing fungus tabasheer

ActiveCN103070021ARealized areaAchieve promotionHorticultureSporeSeeds source
The invention discloses a method for artificially culturing fungus tabasheer. The method comprises the following steps of (1) scraping tabasheer spores onto clean filter paper for later use in the tabasheer generating reason; (2) preparing the stored tabasheer spores into a tabasheer inoculum; (3) in mid-to-late March, selecting a tabasheer host bamboo, and injecting 8 to 12 mu.L of tabasheer inoculum into a leaf sheath along the handle of a bamboo leaf which is grown in the last year to obtain a tabasheer source; and (4) collecting the tabasheer spores from the tabasheer seed source obtained by the step (3), storing the tabasheer spores, preparing the stored tabasheer spores into a tabasheer inoculum, spraying the tabasheer inoculum into the host bamboo to be inoculated, and finally obtaining tabasheer stroma. The tabasheer spores which are naturally grown are collected, and the tabasheer spores are prevented from being affected by an adverse environment through indoor storage, so that the maximal activity of the tabasheer spores is kept; and a protecting agent is added into the tabasheer spores in a proper season to inoculate to obtain the tabasheer seed source, the tabasheer seed source is used for expanding cultivation to obtain a large number of tabasheer stroma, and then tabasheer is manually cultivated in a large area and popularized.
Owner:贵州省生物技术研究所

Copper zinc tin sulfur thin film solar cell and preparation method thereof

ActiveCN105576053AAvoid chemical thermal instability problemsPrevent thermal instabilityFinal product manufacturePhotovoltaic energy generationVulcanizationThermal instability
The invention provides a copper zinc tin sulfur thin film solar cell. The copper zinc tin sulfur thin film solar cell comprises an indium tin oxide conductive glass back electrode layer, a copper zinc tin sulfur thin film light absorption layer, a cadmium sulfide buffer layer and an aluminum-doped zinc oxide / silver wire / aluminum-doped zinc oxide composite transparent conductive window layer which are sequentially laminated, in the aluminum-doped zinc oxide / silver wire / aluminum-doped zinc oxide composite transparent conductive window layer, a layer of silver wire thin film is sandwiched between two layers of aluminum-doped zinc oxide thin films. In the copper zinc tin sulfur thin film solar cell, indium tin oxide conductive glass is adopted to substitute a Mo back electrode, and the thermal instability characteristics of the Mo back electrode and the copper zinc tin sulfur thin film during the vulcanization process are prevented; meanwhile, double-surface transmitting can be achieved, and the device efficiency of the copper zinc tin sulfur thin film solar cell is improved; moreover, the aluminum-doped zinc oxide / silver wire / aluminum-doped zinc oxide composite transparent conductive window layer prepared by a solution method is adopted to substitute an indium tin oxide / aluminum-doped zinc oxide (ITO / AZO) conductive window layer deposited by a vacuum method, the manufacturing cost of the copper zinc tin sulfur thin film solar cell is reduced, and the copper zinc tin sulfur thin film solar cell is very friendly to a surrounding environment.
Owner:RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN
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