Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for constructing concentric nuclear-shell three-dimensional nano multi-ferroic heterojunction array by ALD

A multiferroic heterojunction, three-dimensional nanotechnology, applied in the fields of nanotechnology for information processing, nanotechnology for materials and surface science, nanotechnology, etc. Staying in the plane structure and other problems, to achieve the effect of simple and easy preparation process, simple operation, and improved integration

Active Publication Date: 2017-12-01
XI AN JIAOTONG UNIV
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problems in the prior art, the present invention proposes a method for constructing a concentric core-shell three-dimensional nano-multiferroic heterojunction array by ALD, which solves the problem that the existing multiferroic heterojunction still stays in a planar structure and cannot be miniaturized technical problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for constructing concentric nuclear-shell three-dimensional nano multi-ferroic heterojunction array by ALD

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Include the following steps:

[0033] 1) The ZnO single crystal nanowire array grown on the FTO or ITO conductive glass by the hydrothermal method, and the surface is cleaned by dry nitrogen blowing for later use;

[0034] 2) The ZnO nanowire array grown on the conductive glass in step 1) is sent to the atomic layer deposition system through the vacuum loading robot arm of the atomic layer deposition system, and the ZnO nanowire array substrate is heated to 200°C-300°C for Prepare for deposition of ferroelectric thin film materials;

[0035] 3) On the basis of step 2), cyclopentadiene grade Ba[(cp-Ba)-type] and deionized water (H 2 O) was used as Ba and O precursor sources respectively, and uniform conformal BaTiO was deposited on the surface of ZnO nanowires by ALD technique. 3 Thin film formed BaTiO 3 / ZnO core-shell structure; or using bis(2,2,6,6,-tetramethyl-3,5-heptanedionate) lead [P b (DPM 2 )], titanium tetraisopropoxide [Ti(Oi–Pr) 4 ], tetrakis (ethylmet...

Embodiment 2

[0041] Include the following steps:

[0042] 1) The surface of the ZnO single crystal nanowire array grown on FTO or ITO conductive glass by hydrothermal method is purged and cleaned with dry nitrogen for further use.

[0043] 2) The ZnO nanowire array grown on the conductive glass in step 1 is sent to the atomic layer deposition system through the vacuum loading robot arm of the atomic layer deposition system, and the ZnO nanowire array substrate is heated to 200°C-300°C Prepare for deposition of ferroelectric thin film materials.

[0044] 3) On the basis of step 2), cyclopentadiene grade Ba[(cp-Ba)-type] and deionized water (H 2 O) was used as Ba and O precursor sources respectively, and uniform conformal BaTiO was deposited on the surface of ZnO nanowires by ALD technique. 3 Thin film formed BaTiO 3 / ZnO core-shell structure; or using bis(2,2,6,6,-tetramethyl-3,5-heptanedionate) lead [P b (DPM 2 )], titanium tetraisopropoxide [Ti(Oi–Pr) 4 ], tetrakis (ethylmethylamino...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for constructing a concentric-nuclear-shell three-dimensional nano multi-ferroic heterojunction array by an ALD. A ZnO nano-wire array grows on a piece of conductive glass; a ferroelectric thin films and a magnetic thin film are deposited successively by using the ZnO nano-wire array as a template according to an atomic layer deposition (ALD) method; and after the ferroelectric thin films and the magnetic thin film that are formed on the top of the ZnO nano-wire array are etched, a metal electrode layer is sputtered on the top of the ZnO nano-wire array, so that a three-dimensional nano multi-ferroic heterojunction array having a concentric nuclear-shell structure is obtained. Therefore, technical problems that the existing multi-ferroic heterojunction only has the planar structure and microminiaturization can not be realized are solved. The method is compatible with the existing leading three-dimensional microelectronic device process and can be operated simply; the price is low; the safety is high and the non-toxic and pollution-free performances are good; and batched production is realized. On the basis of the effective technical scheme and the solution, transition of the multi-ferroic heterojunction from the planar structure to the three-dimensional structure is realized, so that the bottleneck breakthrough of transition from the macro dimension to the micro dimension is realized.

Description

technical field [0001] The invention belongs to the technical field of multiferroic heterojunction, and in particular relates to a method for constructing a concentric core-shell three-dimensional nanometer multiferroic heterojunction array by ALD. Background technique [0002] With the rapid development of microelectronics and semiconductor technology, three-dimensional, miniaturized, adjustable and multifunctional has become a new trend in the design and development of electronic components. Exploring and developing related new smart multiscale materials, especially multiferroic materials with both current collection and magnetism, which permeate in various fields of modern technology, has become a research hotspot in the past ten years. Multiferroic materials not only have two or three single ferrotypes (such as ferroelectricity, ferromagnetism and ferroelasticity), but also can produce some new functions through ferrocoupling and synergy, such as the interaction between ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/34C23C16/455B82Y10/00B82Y30/00B82Y40/00
CPCB82Y10/00B82Y30/00B82Y40/00C23C16/45525H01L21/34H01L29/0684
Inventor 张易军刘明任巍叶作光王琛英蒋庄德
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com