Power semiconductor device and preparation method thereof
A technology for power semiconductors and devices, applied in the field of power semiconductor devices, can solve the problems of complex gate drive control, unfavorable control system reliability and cost, limited reduction of reverse recovery power consumption, etc., to reduce leakage current, increase Design flexibility and design dimension, the effect of reverse recovery loss reduction
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Embodiment 1
[0054] figure 2 It is a schematic cross-sectional view of an RC-IGBT device according to the first embodiment of the present invention. The device structure has: collector 201 at the bottom, heavily doped N above the collector 201 + Cathode region 202 and heavily doped P + The collector regions 203 are staggered, and the N-type buffer layer 204 is located in the heavily doped N + Cathode region 202 and heavily doped P + On the collector region 203, the N-type drift region 205 is located on the N-type buffer layer 204; the upper surface of the N-type drift region 205 is a plurality of repetitive front-side structures, and the minimum front-side structure unit includes: a trench gate structure 206, P-type base region 207, trench assisted gate structure 208, lightly doped P - P-type base region 215 and floating FP region 216; the trench gate structure 206 is sequentially filled with a first gate dielectric layer 209 and a first gate electrode 210, the P-type base region 207 ...
Embodiment 2
[0067] Figure 9 It is a schematic cross-sectional view of an RC-IGBT device according to the second embodiment of the present invention. compared to figure 2 The difference between the device structure in the first embodiment and the device structure in the second embodiment is that the upper surface of the floating FP region 316 is directly connected to the emitter electrode 314 at the bottom of the trench auxiliary gate structure 308, while figure 2 In the first embodiment, a Schottky contact is formed between the floating FP region 216 and the emitter electrode 214 . Second Embodiment This design increases the area of the front-side emitter region of the RC-IGBT and the hole path, and the Schottky contact can control the hole injection efficiency, which is beneficial to reduce the on-voltage drop and reverse recovery loss of the device.
[0068] The device structure has a collector 301 at the bottom, heavily doped N above the collector 301 + Cathode region 302 and h...
Embodiment 3
[0080] Figure 18 It is a schematic cross-sectional view of the cell structure of the RC-IGBT device according to the third embodiment of the present invention. Compared with the device structure of the second embodiment of the present invention, the device structure of the third embodiment also has the following characteristics: the topography of the trench gate structure 406 and the trench auxiliary gate structure 408 is an inverted trapezoid, and lightly doped P - type base region 415 and its surface heavily doped with N + The type emitter regions 411 are located on the left and right sidewalls of the trench auxiliary gate structure 408 . This design increases the left and right sidewalls of the trench auxiliary gate structure as the front-side emitter area, which increases the conductive area, which is beneficial to improve the area ratio of the punch-through NPN triode structure on the front side, thereby enhancing the front-side FWD during freewheeling of the RC-IGBT. ...
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