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Zinc oxide film and preparation method thereof, and luminescent device

A technology of zinc oxide film and zinc oxide, which is applied in the direction of semiconductor devices, electrical components, liquid chemical plating, etc., can solve the problems of reducing electron transport performance, reducing electron-hole pair radiation combination, surface oxygen defects, etc. Transmission performance, realization of large area and mass production, low cost effect

Active Publication Date: 2019-04-30
TCL CORPORATION
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  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a zinc oxide thin film and its preparation method, and a light-emitting device, aiming at solving the problems of existing ZnO thin film internal oxygen vacancies and surface oxygen defects, which reduce the radiation combination of electron-hole pairs and reduce the electron transport performance. question

Method used

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  • Zinc oxide film and preparation method thereof, and luminescent device

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[0014] Embodiments of the present invention provide a method for preparing a zinc oxide film. The preparation method comprises the following steps:

[0015] Step S11 : providing a zinc precursor salt solution, mixing and adding a complexing agent, mixing and adding a peroxide to form a mixed reaction system, and reacting to obtain a zinc oxide crystal grain solution.

[0016] In the embodiment of the present invention, the zinc precursor salt solution is hydrolyzed at 25°C to 40°C in the presence of a complexing agent to form zinc hydroxide, and zinc hydroxide is polycondensed to form zinc oxide particles. The reaction rate is very fast. It is necessary to quickly add peroxide after mixing and adding a complexing agent to form a mixed reaction system of peroxide. During the reaction process, the peroxide can rapidly oxidize the zinc ions in the zinc precursor salt solution to form zinc peroxide ZnO 2 , ZnO 2 It is easily decomposed into small ZnO particles, and ZnO particles...

Embodiment 1

[0027] Embodiment 1: The following takes the use of zinc acetate, ethanol, ethanolamine, and hydrogen peroxide as examples to introduce in detail.

[0028] Zinc acetate was dissolved in 50ml of ethanol solution to form a concentration of 0.2mol / L-1mol / L. After fully stirring, the constant temperature was controlled at 40°C, and an appropriate amount of ethanolamine was added dropwise (the molar ratio of ethanolamine to zinc was 1.8-2.5:1). Then, keep w(H in the system 2 O 2 )=0.2%-1% add H 2 O 2 Mass fraction of 30% H 2 O 2 solution, ammonia water to adjust the pH value (6<pH<9), keep stirring for 2h-4h to form a precursor solution. The precursor solution was dropped onto an ITO substrate, spin-coated and annealed at 250°C to 350°C to form a film.

Embodiment 2

[0029] Embodiment 2: The following takes zinc nitrate, isopropanol, diethanolamine, and sodium peroxide as examples to introduce in detail.

[0030] Zinc nitrate was dissolved in 50ml of isopropanol solution to form a concentration of 0.2mol / L-1mol / L, after fully stirring, the constant temperature was controlled at 40°C, and an appropriate amount of diethanolamine (the molar ratio of diethanolamine and zinc was 2) was added dropwise. :1). Then, keep w(Na in the system 2 O 2 )=0.2%-1% add Na 2 O 2 , dilute nitric acid to adjust the pH value (6<pH<9), keep stirring for 2h-4h to form a precursor solution. The precursor solution was dropped onto an ITO substrate, spin-coated and annealed at 250°C to 350°C to form a film.

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Abstract

The invention belongs to the field of display devices, and provides a zinc oxide film and a preparation method thereof, and a luminescent device. Peroxide can be added after the complexing of a zinc precursor salt solution and mixing; a zinc oxide crystal particle solution can be obtained through reaction; and the film forming of the zinc oxide crystal particle solution can be performed on a substrate so that the zinc oxide film can be obtained, and therefore, the internal oxygen vacancy and surface oxygen deficiency of the zinc oxide film can be reduced, the radiation combination of electronhole pairs can be decreased, and electronic transmission performance can be enhanced. The preparation method is simple in technology and low in cost, so that large area and large-scale production canbe realized.

Description

technical field [0001] The invention belongs to the field of display devices, and particularly relates to a zinc oxide film, a preparation method thereof, and a light-emitting device. Background technique [0002] Zinc oxide (ZnO) is a group II-VI wide-bandgap semiconductor material with large exciton binding energy, which can realize the stimulated emission of ultraviolet light at room temperature, which provides a broad development for the application of short-wavelength light-emitting devices. prospect. The excellent properties and wide application of ZnO depend on the preparation of high-quality, low-cost ZnO thin films. There are many preparation methods for ZnO thin films, including molecular beam epitaxy, pulsed laser deposition, metal organic chemical vapor deposition, sputtering, spray pyrolysis and sol-gel. Among them, the sol-gel method has many advantages compared with other methods, such as simple process, low equipment, large-area film formation, wide doping ...

Claims

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Application Information

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IPC IPC(8): C23C18/12H01L33/14H01L33/02
CPCC23C18/1216C23C18/1245C23C18/1262H01L33/02H01L33/14
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
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