Method for preparing nano-scale pattern substrate for nitride epitaxial growth

A technology of epitaxial growth and graphic substrate, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of expensive equipment, incapable of large-scale production, high cost, etc., so as to reduce production costs and realize The effect of scale and large-area production
CN100587919CInactive Publication Date: 2010-02-03UNILUMIN GRP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNILUMIN GRP
Publication Date
2010-02-03
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to the semiconductor technical field and discloses a method for manufacturing a nanometer pattern substrate used for the epitaxial growth of a nitride. The method comprises the followings steps: settling a layer of silicon dioxide or silicon nitride film on a substrate used for the epitaxial growth of the nitride; the silicon dioxide or silicon nitride film is coated with a layer of thin metal layer through vapor deposition; conducting the annealing heat treatment, and forming uniformly distributed nano-scaled metal particles; utilizing the formed nano-scaled metal particles as masks to etch the silicon dioxide or silicon nitride film so as to form a nanometer pattern structure; using the silicon dioxide or silicon nitride film with the nanometer pattern structure asa mask etching substrate to transfer the nanometer pattern structure of the substrate; and etching to remove the silicon dioxide or silicon nitride film, cleaning the substrate, and obtaining the nanometer pattern substrate. The invention can reduce the dislocation density in the epitaxial layer of the nitride, improve the crystal quality of epitaxial materials, improve the performance of devicesand help to realize the scaled and large area manufacture.
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Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a nanoscale pattern substrate used for nitride epitaxial growth. Background technique

[0002] Wide-bandgap nitride compound semiconductors represented by III-V gallium nitride (GaN) are used in ultraviolet / blue / green light-emitting diodes, lasers, solar-blind ultraviolet photodetectors, and high-frequency, high-temperature, high-power electronics Devices and many other aspects have important and extensive applications. Nitride is mainly heteroepitaxially grown on sapphire, silicon, silicon carbide, zinc oxide, gallium arsenide substrates, or homoepitaxially grown on free-standing gallium nitride substrates.

[0003] Except for free-standing GaN substrates, there are large lattice constant mismatches and differences in thermal expansion coefficients between other substrates and nitrides. Therefore, in the nitride epitaxial layer grown by metal-...

Claims

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