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Multi-subcell compound photovoltaic cell

A technology of photovoltaic cells and compounds, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as insufficient absorption of natural sunlight spectrum

Active Publication Date: 2015-09-16
莱芜高新区同盛工贸有限公司
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  • Application Information

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Problems solved by technology

[0003] For III-V compound photovoltaic cells, GaInP / GaAs / Ge is the most typical and mature III-V compound photovoltaic cell, and its photocurrent density can reach 25mA / cm2. However, the existing III-V The spectral absorption of natural sunlight by the group compound photovoltaic cells is not sufficient, and most of them are epitaxial to the semiconductor substrate layer by layer in the form of vertical and multi-junctions, and often cannot form confinement effects on light like silicon photovoltaic cells. Flocking surface, the existing III-V compound photovoltaic cells need to be further improved

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[0014] The present invention will be further described below in conjunction with the best implementation mode, and the beneficial effects of the present invention will become clear in the detailed description.

[0015] see Figure 1-3 , figure 1 It is a schematic diagram of the structure of a three-subjunction photovoltaic cell, figure 2 for figure 1 Enlarged view of area A in Middle, which shows details of the photovoltaic cell of the present invention; for an aspect of the present invention, see figure 2 The compound photovoltaic cell of the present invention has a multi-junction InAlAsP / InGaAs / Ge structure, wherein the InAlAsP subcell (300) has a band gap of about 1.9 eV, the InGaAs sub cell (200) has a band gap of about 1.40 eV, and the Ge sub cell The bandgap of (100) is about 0.66ev. The optimized structure of the bandgap of the triple-junction photovoltaic cell of the present invention can match the wavelength structure of the natural solar spectrum, make full use ...

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Abstract

The present invention relates to a multi-subcell compound photovoltaic cell, and in particular, to an InAlAsP / InGaAs / Ge three-subcell compound photovoltaic cell. The present three-subcell compound photovoltaic cell has continuous two-step projection structures each including a first-step projection with a slope and a second-step projection with a slope. A transparent material m2 with a high index of refraction is formed in the regions between the second-step projections, and the top surface of the transparent material m2 is flat and level with the top surfaces of the second-step projections. A transparent material m1 with a high index of refraction is formed in the regions between the first-step projections, and the top surface of the transparent material m1 is level with the top surfaces of the f first-step projections and contacts the transparent material m2 with a high index of refraction. The refractive index of the material m1 is greater than that of the material m2, and light irradiating the top surface of the cell tends irradiate the flat surface of the two-step projection structures, so that the light intensity irradiating the flat surface having a high-quality epitaxial layer is greatly increased, and therefore the photoelectricity conversion rate is increased.

Description

technical field [0001] The invention relates to a compound photovoltaic cell, especially a multi-subjunction compound photovoltaic cell. Background technique [0002] III-V compound photovoltaic cells were first used in the space field, but with the advancement of technology, III-V compound photovoltaic cells are also increasingly used in non-space fields. Compared with silicon photovoltaic cells, III-V compound photovoltaic cells have greater energy conversion efficiency. The photoelectric conversion efficiency of III-V compound photovoltaic cells manufactured through advanced technology can exceed 25%, while silicon photovoltaic cells do not will exceed 20%. Compared with silicon photovoltaic cells, III-V compound photovoltaic cells can achieve maximum conversion of multiple solar radiations by using multiple sub-cells with different band gap energies. [0003] For III-V compound photovoltaic cells, GaInP / GaAs / Ge is the most typical and mature III-V compound photovol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0687H01L31/054H01L31/0236
CPCY02E10/52Y02E10/544H01L31/0687H01L31/02363H01L31/0547
Inventor 司红康
Owner 莱芜高新区同盛工贸有限公司
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