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Three-sub-node compound photovoltaic cell

A photovoltaic cell and sub-battery technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problem of insufficient absorption of natural sunlight spectrum

Inactive Publication Date: 2014-12-10
六安市大宇高分子材料有限公司
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Problems solved by technology

[0003] For III-V compound photovoltaic cells, GaInP / GaAs / Ge is the most typical and mature III-V compound photovoltaic cell, and its photocurrent density can reach 25mA / cm2. However, the existing III-V The spectral absorption of natural sunlight by the group compound photovoltaic cells is not sufficient, and most of them are epitaxial to the semiconductor substrate layer by layer in the form of vertical and multi-junctions, and often cannot form confinement effects on light like silicon photovoltaic cells. Flocking surface, the existing III-V compound photovoltaic cells need to be further improved

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[0014] The present invention will be further described below in conjunction with the best embodiment, and the beneficial effects of the present invention will become clear in the detailed description;

[0015] see Figure 1-2 , figure 1 It is a schematic diagram of the structure of the three-junction photovoltaic cell of the present invention, figure 2 for figure 1 Enlarged view of region A in Middle, which shows details of the photovoltaic cell of the present invention; for an aspect of the present invention, see figure 2 The compound photovoltaic cell of the present invention has a multi-junction InAlAsP / InGaAs / Ge structure, wherein the InAlAsP subcell (300) has a band gap of about 1.9 eV, the InGaAs sub cell (200) has a band gap of about 1.40 eV, and the Ge sub cell The bandgap of (100) is about 0.66ev. The optimized structure of the bandgap of the triple-junction photovoltaic cell of the present invention can match the wavelength structure of the natural solar spectru...

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Abstract

The invention relates to a three-sub-node compound photovoltaic cell, in particular to an InA1AsP / InGaAs / Ge compound photovoltaic cell. The cell has an optimized 1.90ev / 1.40ev / 0.6ev band structure. The cell has a second order projection structure, and n++InGap / p++InGaAsP heterojuncttion tunnelling diodes and a base region thickness relationship configured with above photovoltaic cell structure. The three-sub-node III-V clan compound photovoltaic cell is high in photoelectric conversion efficiency and collection efficiency, and particularly has an effective range limitation to natural light.

Description

technical field [0001] The invention relates to a compound photovoltaic cell, especially a multi-subjunction compound photovoltaic cell. Background technique [0002] III-V compound photovoltaic cells were first used in the space field, but with the advancement of technology, III-V compound photovoltaic cells are also increasingly used in non-space fields. Compared with silicon photovoltaic cells, III-V compound photovoltaic cells have greater energy conversion efficiency. The photoelectric conversion efficiency of III-V compound photovoltaic cells manufactured through advanced technology can exceed 25%, while silicon photovoltaic cells do not will exceed 20%. Compared with silicon photovoltaic cells, III-V compound photovoltaic cells can achieve maximum conversion of multiple solar radiation by using multiple sub-cells with different band gap energies; [0003] For III-V compound photovoltaic cells, GaInP / GaAs / Ge is the most typical and mature III-V compound photovolt...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/078H01L31/0304
CPCY02E10/50H01L31/0725
Inventor 司红康马梅谢发忠
Owner 六安市大宇高分子材料有限公司
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