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Hybrid three-junction compound photovoltaic cell

A technology of photovoltaic cells and compounds, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of small diffusion length of Ge cells, low light absorption coefficient, insufficient absorption of natural sunlight spectrum, etc.

Inactive Publication Date: 2014-12-10
六安市大宇高分子材料有限公司
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Problems solved by technology

[0003] For III-V compound photovoltaic cells, GaInP / GaAs / Ge is a traditional, most typical and mature III-V compound photovoltaic cell, with a bandgap structure of 1.86ev / 1.42ev / 0.66ev, and its light The current density has been able to reach 25mA / cm2; however, the pure GaInP / GaAs / Ge photovoltaic cell has a small minority carrier diffusion length and a low light absorption coefficient in the long-wave range of the Ge cell, and its short-circuit current density is mainly limited by the GaInP top. Therefore, the spectral absorption of natural sunlight is not sufficient; at the same time, most of the current multi-subjunction photovoltaic cells are epitaxial to the semiconductor substrate layer by layer in the form of vertical and multi-junction, which often cannot be achieved like silicon photovoltaic cells. Forming a flocked surface with a confinement effect on light, the existing III-V compound photovoltaic cells need to be further improved

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Embodiment Construction

[0013] The present invention will be further described below in conjunction with the best embodiment, and the beneficial effects of the present invention will become clear in the detailed description;

[0014] see Figure 1-2 , figure 1 It is a schematic diagram of the structure of the three-junction photovoltaic cell of the present invention, figure 2 for figure 1 Enlarged view of region A in middle, which shows details of InAlAsP / InGaAs / Ge photovoltaic cell C2; Figure 1-2 It should be regarded as a schematic diagram, and its size and proportion relationship does not reflect the actual situation, such as figure 1 The layers of batteries C1 and C2 in are only schematic, and it does not mean that the layers of batteries C1 and C2 are the same. see figure 1 , the shape of the upper illuminated surface of the compound photovoltaic cell of the present invention is a continuous second-order protrusion structure (a, b), each second-order protrusion structure (a, b) has a firs...

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Abstract

The invention relates to a hybrid three-junction compound photovoltaic cell. The surface of the cell is in a two-level protrusion structure comprising a traditional GaInP / GaAs / Ge three-junction compound photovoltaic cell and a novel InAlAsP / InGaAs / Ge three-junction compound photovoltaic cell which are alternately arranged. The hybrid three-junction compound photovoltaic cell has an optimized energy band structure and allows maximal utilization of solar energy, and photoelectric conversion efficiency and collection efficiency can be improved.

Description

technical field [0001] The invention relates to a compound photovoltaic cell, especially a multi-subjunction compound photovoltaic cell. Background technique [0002] III-V compound photovoltaic cells were first used in the space field, but with the advancement of technology, III-V compound photovoltaic cells are also increasingly used in non-space fields. Compared with silicon photovoltaic cells, III-V compound photovoltaic cells have greater energy conversion efficiency. The photoelectric conversion efficiency of III-V compound photovoltaic cells manufactured through advanced technology can exceed 25%, while silicon photovoltaic cells do not will exceed 20%. Compared with silicon photovoltaic cells, III-V compound photovoltaic cells can achieve maximum conversion of multiple solar radiation by using multiple sub-cells with different band gap energies; [0003] For III-V compound photovoltaic cells, GaInP / GaAs / Ge is a traditional, most typical and mature III-V compoun...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/078H01L31/0304
CPCY02E10/50H01L31/0725H01L31/02363
Inventor 司红康马梅谢发忠
Owner 六安市大宇高分子材料有限公司
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