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Production method of inverted-growth InAlAsP/InGaAs/Ge triple-junction photovoltaic battery

A technology of photovoltaic cells and sub-cells, which is applied in the field of preparation of compound photovoltaic cells, and can solve problems such as insufficient absorption of natural sunlight spectrum

Inactive Publication Date: 2014-12-10
六安市大宇高分子材料有限公司
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Problems solved by technology

[0003] For III-V compound photovoltaic cells, GaInP / GaAs / Ge is the most typical and mature xx group photovoltaic cell, and its photocurrent density can reach 25mA / cm2. However, the existing III-V compound photovoltaic cells The spectral absorption of natural sunlight by the battery is not sufficient, and most of them are epitaxial to the semiconductor substrate layer by layer in the form of vertical and multi-junction, which often cannot form a flocking surface that confines the light like silicon photovoltaic cells. , the existing III-V compound photovoltaic cells need to be further improved

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  • Production method of inverted-growth InAlAsP/InGaAs/Ge triple-junction photovoltaic battery
  • Production method of inverted-growth InAlAsP/InGaAs/Ge triple-junction photovoltaic battery
  • Production method of inverted-growth InAlAsP/InGaAs/Ge triple-junction photovoltaic battery

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with the best embodiment, and the beneficial effects of the present invention will become clear in the detailed description;

[0024] see Figure 8a and 8b, Figure 8a Schematic diagram of the structure of the three-junction photovoltaic cell that needs to be prepared for this method, Figure 8b The details of the photovoltaic cell structure layer; the compound photovoltaic cell has a three-junction InAlAsP / InGaAs / Ge structure, in which the band gap of the InAlAsP sub-cell 300 is about 1.9 eV, the band gap of the InGaAs sub-cell 200 is about 1.40 eV, and the Ge sub-cell The bandgap of 100 is about 0.66ev, and the optimized structure of the bandgap of the triple-junction photovoltaic cell prepared by the present invention can match the wavelength structure of the natural solar spectrum, make full use of the photon energy of each wavelength band of photovoltaics, and optimize the solar energy as a whole...

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Abstract

The invention relates to a production method of an inverted-growth InAlAsP / InGaAs / Ge triple-junction photovoltaic battery. The production method specifically includes defining and etching a continuous two-step groove structure on the upper surface of a growth substrate by a photolithography technique; sequentially extending to obtain an InAlAsP sub-battery, an InGaAs sub-battery and a Ge sub-battery; quickly depositing a Ge bonding layer on the surface of the integral structure by a CVD (chemical vapor deposition) method and planarizing; providing another substrate and bonding the substrate to the planarized Ge bonding layer by a bonding the technique; etching the growth substrate and transferring the substrate. The production method is simple and high in efficiency, and the inverted-growth InAlAsP / InGaAs / Ge triple-junction photovoltaic battery produced by the production method has high photoelectric conversion efficiency and collection efficiency and has effective range limit function to natural light in particular.

Description

technical field [0001] The present invention relates to a method for preparing a compound photovoltaic cell, especially a method for preparing an inverted growth InAlAsP / InGaAs / Ge triple-junction photovoltaic cell (also known as a method for preparing an inverted growth three-junction III-V compound photovoltaic cell) . Background technique [0002] III-V compound photovoltaic cells were first used in the space field, but with the advancement of technology, III-V compound photovoltaic cells are also increasingly used in non-space fields. Compared with silicon photovoltaic cells, III-V compound photovoltaic cells have greater energy conversion efficiency. The photoelectric conversion efficiency of group xx photovoltaic cells manufactured through advanced technology can exceed 25%, while silicon photovoltaic cells will not exceed 20%. %. Compared with silicon photovoltaic cells, III-V compound photovoltaic cells can achieve maximum conversion of multiple solar radiation by u...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1844Y02E10/544Y02P70/50
Inventor 司红康马梅谢发忠
Owner 六安市大宇高分子材料有限公司
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