Production method of inverted-growth InAlAsP/InGaAs/Ge triple-junction photovoltaic battery
A technology of photovoltaic cells and sub-cells, which is applied in the field of preparation of compound photovoltaic cells, and can solve problems such as insufficient absorption of natural sunlight spectrum
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[0023] The present invention will be further described below in conjunction with the best embodiment, and the beneficial effects of the present invention will become clear in the detailed description;
[0024] see Figure 8a and 8b, Figure 8a Schematic diagram of the structure of the three-junction photovoltaic cell that needs to be prepared for this method, Figure 8b The details of the photovoltaic cell structure layer; the compound photovoltaic cell has a three-junction InAlAsP / InGaAs / Ge structure, in which the band gap of the InAlAsP sub-cell 300 is about 1.9 eV, the band gap of the InGaAs sub-cell 200 is about 1.40 eV, and the Ge sub-cell The bandgap of 100 is about 0.66ev, and the optimized structure of the bandgap of the triple-junction photovoltaic cell prepared by the present invention can match the wavelength structure of the natural solar spectrum, make full use of the photon energy of each wavelength band of photovoltaics, and optimize the solar energy as a whole...
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