Gallium Nitride-Based Low Leakage Current Fixed Beam Switching Field Effect Transistor Mixer
A field-effect transistor and gallium nitride-based technology, applied in the field of micro-electromechanical systems, can solve problems such as chip overheating, reduced chip life, and affecting chip stability, and achieve the effects of reduced power consumption, high switching frequency, and small size
Active Publication Date: 2017-12-05
SOUTHEAST UNIV
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
As the number of transistors in the chip is increasing, the power consumption of the integrated circuit will follow. Excessive power consumption will cause the chip to overheat, and the operating characteristics of the transistor will be affected by the temperature. Change, so overheating The chip temperature will not only reduce the life of the chip, but also affect the stability of the chip
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0017] The GaN-based low leakage current solid-supported beam switch MESFET mixer of the present invention is fabricated on a gallium nitride substrate 1, and consists of three N-type MESFETs with solid-supported beam switches, that is, the first fixed-supported beam-gate N-type MESFET 2, the second fixed support beam grid N-type MESFET 3, the first fixed support beam grid N-type MESFET 2, the second fixed support beam grid N-type MESFET 3, the third fixed support beam grid N-type MESFET 4, the first fixed support A layer of silicon nitride 12 is formed on the gates of the beam grid N-type MESFET 2, the second fixed beam grid N-type MESFET 3, and the third fixed beam grid N-type MESFET 4, and the MESFET consists of a gate 7, a source and Drain structure, wherein the source and drain are composed of metal and heavily doped N region to form ohmic contact, the gate is composed of metal and channel region to form Schottky contact, lead 5 is made of Al, above MESFET gate 7 A MEMS f...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The purpose of the present invention is to provide a gallium nitride-based low leakage current solid-supported beam switch field-effect transistor mixer, using three MESFETs with MEMS solid-supported beam switch structure to replace the traditional MESFET, reducing the number of transistors in the mixer gate leakage current, reducing the power consumption of the circuit, the mixer is small and easy to integrate, the application of gallium nitride material with high electron mobility can achieve a very high switching frequency, another innovation of the present invention lies in the mixer The second working mode of the device, if only DC voltage V is applied to the gate of the third fixed beam grid N-type MESFET (4) located below the differential pair and the third fixed beam grid N-type MESFET (4) ) is in a conducting state, the third fixed-supported beam grid N-type MESFET (4) can be considered as a constant current source, and this mixer can also be used as a differential amplifier at this time, and such a design can make the present invention utilize The same number of transistors performs two different functions.
Description
technical field [0001] The invention provides a gallium nitride-based low-leakage current solid-supported beam switch MESFET mixer, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] With the development of wireless communication technology, the wave of rapid update of mobile terminal equipment has hit the world, and various advanced technologies have been invented and applied to the manufacture of mobile terminal equipment. At the same time, as an indispensable and important part of such equipment, radio frequency integrated circuit (RFIC) chips are also developing rapidly, the scale of integration continues to expand, and the operating frequency continues to increase. Traditional silicon-based materials can no longer meet the requirements. MESFET based on gallium nitride substrate is proposed and applied under this background. Due to the good characteristics of gallium nitride material, the transistor manufactured by it h...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H03D7/16
Inventor 廖小平陈子龙
Owner SOUTHEAST UNIV