Film for forming protective film and composite sheet for forming protective film

Abstract

The present invention provides a film for forming a protective film capable of forming a highly reliable protective film while suppressing warping of a wafer. The film for protective film formation of this invention has thermosetting property, the glass transition temperature after thermosetting is 150-300 degreeC, and the tensile elastic modulus at 23 degreeC after thermosetting is 0.5-10 GPa.

Description

technical field [0001] The present invention relates to a film for forming a protective film, which can form a protective film on a semiconductor wafer or a semiconductor chip, and can improve the manufacturing efficiency of the semiconductor chip. In particular, it relates to a film for forming a protective film used in the manufacture of a semiconductor chip structured in a so-called face down mode. Background technique [0002] In recent years, semiconductor devices have been manufactured using a so-called face-down packaging method. In the face-down mode, a semiconductor chip having electrodes such as bumps on a circuit surface (hereinafter, may be simply referred to as a “chip”) is used, and the electrodes are bonded to a substrate. Therefore, the surface (chip back surface) opposite to the circuit surface of the chip is exposed. [0003] The exposed chip backside may be protected by an organic film. Conventionally, a chip having a protective film composed of such an...

AI Technical Summary

Problems solved by technology

[0005] In the past, when the wafer itself was sufficiently thick, the wafer itself did not bend, but as the wafer became thinner, the following problem occurred: the shrinkage ratio between the surface of the wafer with circuits formed and the back surface of the wafer without circuits Poor, resulting in bowing of the thinned wafer

[0006] Bending a large wafer may cause transportation failure in subsequent chip manufacturing steps

In addition, it may be difficult to cut the wafer due to the bending of the wafer

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