The invention discloses a thin film deposition device based on an APCVD technology, and relates to the technical field of normal-pressure
chemical deposition. The thin film deposition device based onthe APCVD technology comprises a heating body
assembly, a gas inlet box, a
diffusion head, a vacuum
system and an exhaust mechanism, wherein the heating body
assembly is arranged above a
wafer; the
diffusion head is arranged below the
wafer; the exhaust mechanism is arranged below the
diffusion head; a gas outlet of the gas inlet box communicates with a gas inlet of the diffusion head; a large number of
inert gas is not needed as a barrier, so that protective gas can be saved; through vacuum adsorption of the back surface of the
wafer, bending of the wafer caused by film forming temperature and film stress is corrected, back
surface film forming can be prevented, and film uniformity is improved; the film forming surface of the wafer faces downwards, and
impurity particles fall down due togravity and then are taken away by
airflow and do not fall on the wafer; the deposition range is large, thin film deposition is completed on the deposition surface at a time, and the uniformity of thethin film in the deposition surface is good; after the film is formed, the actual value of the film thickness uniformity is less than + / -2 percent; and the heating body
assembly can drive the wafer to swing, so that the uniformity of the film on the deposition surface of the wafer can be further improved.