62results about How to "Guaranteed beam quality" patented technology

The invention relates to a light polarization compensation device for utilizing a beam shaping technology and a space beam combination system to convert incident laser into polarized laser to be output and belongs to the technical field of light polarization compensation. The device mainly comprises an input optical interface, a polarization beam splitter, a shaper, a first reflecting mirror, a spiral wave device, a second reflecting mirror and a space beam combiner. Against the polarization compensation problem of a laser, the light polarization compensation device aims to solve the problem of polarization instability and low extinction ratio of the laser, the lossless polarization compensation device based on the high-duty-cycle space beam combination system and the beam shaping technology is provided, and random laser is converted into high-extinction-ratio polarization laser to be output on the condition that the laser power level and beam quality are not affected. The light polarization compensation device is very small in power loss, the structure of the laser is not affected, and the cost and the complexity of the linear polarization laser can be effectively reduced; a control method for the light polarization compensation device is simple, a feedback and control system does not need to be arranged, and the light polarization compensation device is stable and reliable in performance.

A solid condition kHz pico-second laser burst regenerative amplifier belongs to a omni-solid condition regenerative amplifier, which is characterized in that: the two lumen mirror of the magnifying resonant cavity are consisted of an average lumen formed by a first omni-opposite lumen mirror (7) and a second omni-opposite lumen mirror (14), the inner of the resonant cavity is arranged with a minus lens (12) and a second lambada/4wave plate (13) arranged between the laser crystal (9) which is a Nd:YAG bar and the second omni-opposite lumen mirror. The fast axis of the wave plate is parallel with the light vector of the inputting linearly-polarized light. The minus lens is arranged between the laser crystal and the second lambada/4 wave plate or the second lambada/4 wave plate and the second omni-opposite lumen mirror. The pump source is a continuously worked semiconductor laser diode array (10) and the working frequency is 1kHz. The laser crystal can also be a Nd:YLF bar, here the second lambada/4 wave plate is needless. The invention reduces the volume and the costs of the system, effectively solves the problem of Nd:YAD regenerative amplifier domino offect, and effectively ensures the magnification and the beam quality.

The invention discloses a high-power laser strip-type chip sintering clamp, and relates to the field of a semiconductor photoelectric technology. The high-power laser strip-type chip sintering clamp comprises a clamp base, a positioning plate, a probe positioning apparatus and spring probes, wherein a check block for limiting heat sink is arranged at one end of the clamp base while a positioning mechanism for positioning the heat sink is arranged at the other end of the clamp base; the positioning plate is perpendicularly mounted at the end of the clamp base through a fastener, wherein the heat sink check block is fixed at the end of the clamp base; a plurality of uniformly distributed through holes are formed in the probe positioning apparatus, wherein the through holes are adaptive with the spring probes; the spring probes are inserted in the positioning through holes respectively; the bottom ends of the spring probes are positioned above the heat sink and used for compressing to-be-sintered chips; and threads are further formed in the top parts of the positioning through holes, and the threads are matched with adjustable bolts for adjusting the magnitude of torsion of the spring probes. The clamp can apply different pressures on different parts of the high-power laser chip by the spring probes on the positioning plate so as to balance the stresses of the chip, correct smile bending degree and improve the optical beam quality of the chip.

The invention relates to the technical field of lasers, in particular to an optical fiber coupling semiconductor laser device. The optical fiber coupling semiconductor laser device comprises a coupling lens and a semiconductor laser device module capable of outputting a plurality of P light beams and at least one S light beam. The coupling lens is used for coupling the multiple P light beams and the at least one S light beam into a beam to form converged light. The number of the P light beams is larger than the number of the S light beams. In front of the coupling lens, each P light beam corresponds to a P light spot, and each S light beam corresponds to an S light spot. The multiple P light spots are sequentially arranged side by side, and the S light spots are sequentially arranged side by side. Each S light spot corresponds to the corresponding P light spot, each S light spot is coincident with the corresponding P light spot, and the P light spots corresponding to the S light spots are adjacent. The optical fiber coupling semiconductor laser device has the high transmittance and the high coupling efficiency of a space light beam combining mode, and has the high light beam quality of a polarization multiplexing mode.

The invention provides a tapered semiconductor laser, which comprises a ridge region and a tapered region. The seed laser near the diffraction limit is generated in the ridge region, and the seed laser enters the cone region to amplify the output. The front cavity surface of the conical region, that is, the cavity surface of one end connected with the ridge region, has no feedback laser, and the conical region unidirectionally amplifies the seed laser. The scheme can realize the unidirectional amplification of laser beam, the front cavity surface without feedback structure makes the beam quality not easy to deteriorate in the amplification process, can greatly increase the length of the conical region, can not only output high power, but also maintain the beam quality near the diffractionlimit, can achieve ultra-high brightness laser output.

The invention provides a quantum cascading laser device. The quantum cascading laser device includes stepped heat sinks, single-tube quantum cascading laser devices, aspherical lenses and reflecting mirrors, wherein a plurality of step planes are formed on the wall surface of each stepped heat sink, the single-tube quantum cascading laser devices are fixed on the step planes of the stepped heat sinks, the aspherical lenses are fixed on the step planes of the stepped heat sinks and located at the front ends of the single-tube quantum cascading laser devices, and the reflecting mirrors are fixed on the step planes of the stepped heat sinks and located at the front ends of the aspherical lenses. The quantum cascading laser device solves the heat dissipation problem of current quantum cascading laser devices, an external-cavity spectral beam combining mode is adopted to ensure the quality of laser beams, so that a feasible high-efficiency beam combining method of the quantum cascading laser device is provided.

A multi-waveguide integrated resonance semiconductor laser belongs to the technical field of semiconductor laser chips, solves the problem that a conventional laser is poor in mode characteristics, unstable in work, large in divergence angle, poor in light beam quality and low in brightness, and improves output power of semiconductor laser. A photon bridge, mode stabilizers and a power amplifier are arranged on a semiconductor laser chip, wherein the photon bridge is connected with the power amplifier through one or more same or different mode stabilizer arrays, so that laser is transmitted and resonated between mode stabilizers and the power amplifier on the semiconductor laser chip along the photon bridge. The mode stabilizers stabilize optical modes, or generate a seed light source of high beam quality with stable work mode and single optical mode, and the power amplifier amplifies the power of the seed light source. The multi-waveguide integrated resonance semiconductor laser realizes single tube or linear array output of semiconductor laser with high power, high brightness and narrow linewidth, and obtains single tube or linear array output of multi-wavelength semiconductor laser.

The invention discloses a signal-pump beam combiner capable of keeping high beam quality and aims at solving the problem that an existing signal-pump beam combiner is difficult to keep high beam quality while achieving extra-large mode field output. The signal-pump beam combiner comprises a signal fiber, a signal transition fiber, pump fibers, a low-refractive index glass tube and an output fiber,wherein the signal fiber is welded with the signal transition fiber; N pump fibers surround the periphery of the signal transition fiber and pass through a taper in the middle of the low-refractive index glass tube to form a molten fiber bundle; the molten fiber bundle is welded with the output fiber; and the output fiber also passes through the taper. The signal-pump beam combiner is capable ofreducing the through put loss of signal light and keeping high coupling efficiency of pump light, thereby keeping high beam quality when the signal light reaches the signal transition fiber (a relatively large mode field) from the signal fiber (a small mode field) and then reaches the output fiber (an extra-large mode field).

The invention relates to a method and apparatus for preparing black silica by adopting lattice scanning. The method includes the following steps that: 1, a silicon wafer is arranged in a doped material-containing sample chamber; 2, a single laser beam of a pulse laser passes through a diaphragm, a reflector, a half wave plate, a polarizer, a shutter, a beam expanding mirror, a focusing lens, a Dammann grating and the like, so that lattice laser can be obtained; 3, the lattice laser irradiates on the surface of the silicon wafer, and a computer controls the opening and closing of the shutter and the movement of a three-dimensional translational platform, and therefore, lattice scanning can be realized, and a black silica material of which the surface is of a micro pointed cone structure can be obtained. According to the method and apparatus of the invention, the Dammam grating is adopted, and the single beam laser can be converted into two-dimensional and equal-light intensity array beams; when the Dammam grating splits the laser beam, the influence of chromatic dispersion in the light splitting process of an ordinary semi-transmittance and semi-reflection mirror can be avoided, and the quality of the split light beams can be ensured; and point-by-point scanning adopted for preparing the black silica is converted into lattice scanning, and therefore, the preparation efficiency of the black silica can be greatly improved.

The invention discloses an improved Z-scanning apparatus, wherein different to-be-measured samples are pre-scanned so as to automatically determine the optimum measurement light intensity corresponding to the to-be-measured samples; at the optimum measurement light intensity, the following problems are effectively avoided: 1) influence of high-order non-linear optics effect due to excessive lightintensity; and 2) influence caused by excessive noise signals due to weakness of the light intensity; therefore, the measurement result is accurate and reliable. In the apparatus, a plurality of reflectors and aperture diaphragms are arranged for shaping the beam. In the apparatus, corresponding devices are added to measure influences, caused by laser energy fluctuation, instable laser mold locking and sample breaking, during the measurement; and corresponding devices are added to avoid influence of thermal effects and polarization state during the measurement. On the mentioned basis, the incident light source is replaceable, the polarization state is adjustable, and closed pore and opened core data can be measured at the same time.

The invention discloses a laser energy amplifier which comprises a signal laser seed source, an optical fiber laser amplification module, a first signal laser wavelength reflector, a second signal laser wavelength reflector and a solid laser amplification module. The signal laser seed source is used for outputting signal laser; the fiber laser amplification module amplifies and outputs weak signallaser output by the signal laser seed source, and comprises an all-fiber structure signal amplification module or a free space signal amplification module; and the first signal laser wavelength reflector and the second signal laser wavelength reflector transmit laser beams output by the fiber laser amplification module to the solid laser amplification module. The solid laser amplification modulecarries out secondary amplification on the input laser and then outputs the laser. The solid laser amplification module comprises a solid lath crystal semiconductor pump laser amplification module ora solid round bar crystal pulse xenon lamp pump laser amplification module. The multi-stage laser energy amplifying device is arranged, different stages can be combined and expanded according to needs, and weak signals can be subjected to laser amplification.

The invention pertains to the technical field of laser, in particular to a method for improving the quality of light pulse and light beam of amplified signals output from an optical parametric amplifier. In the process of optical parametric amplification (OPA) or optical parametric chirped pulse amplification (OPCPA), the method utilizes an OPA device to improve the quality of the light pulse and the light beam of the amplified signals through controlling phase shifts of signal light in the pump light direction. The method avoids influences of spatial walk-off and group velocity mismatch, relaxes requirements on the quality of pump light, and improves the quality of the light pulse and the light beam of the amplified signals; thereby the method is suitable for a high-energy OPA device or a high-energy OPCPA device.

The invention relates to a mixed chamber mode locking laser oscillator and a laser outputting method thereof. Laser crystal is arranged between a recessed cylindrical surface reflection mirror and a protruding cylindrical surface reflection mirror. A panel reflection mirror receives light scattered by the laser crystal. A semiconductor saturation adsorption mirror receives light of the panel reflection mirror. A matching lens is arranged between the semiconductor saturation adsorption mirror and the panel reflection mirror. Pump light forms light spots, penetrates through the recessed cylindrical surface reflection mirror and is output from one side of the protruding cylindrical surface reflection mirror. The invention also comprises a laser outputting method. The method comprises steps of during chamber adjusting, shielding the semiconductor saturation adsorption mirror, wherein a second non-steady chamber is in the stable state and the laser output is output from the protruding cylindrical reflection mirror. According to the invention, a non-steady chamber structure is used in the horizontal direction where the light beam quality is output by approximating the diffraction limit; a steady chamber structure is still used in the vertical direction; mode field area in the chamber is increased; the light strength in the chamber under the power level is reduced; and on the precise that the light beam quality is kept, quite high output power is generated.

The invention discloses an active cooling type one-dimensional wave surface correction device which comprises a base, an actuator and a lens. A cooling cavity is formed in the top of the base, a water inlet is formed in one end of the cooling cavity, and a water outlet is formed in the other end of the cooling cavity. A through hole is formed in the bottom of the cooling cavity, and the actuator is arranged on the base and adheres to the lens through the through hole in the bottom of the cooling cavity, wherein the cooling cavity is covered with the lens. A cooling material flows in through a water mouth at the bottom of a cooling plate and flows from a water mouth in the top, the cooling material in the cooling cavity fully conducts heat exchange with the lens, so that active cooling is achieved. When weave surface fluctuation in the length direction of a strip-shaped light spot is found through Hartmann detection, a corresponding current or voltage is loaded on the corresponding actuator through a connector, the actuator drives a lens face to vertically move, and the lens face is deformed, so that one-dimensional correction of the weave face shape is achieve.

The present invention relates to the technical field of laser application and in particular to a laser collimation structure and a product using the same. The laser collimation structure comprises anoptical amplifier and a beam splitter. The optical amplifier has an output end and an input end. The light output from the output end of the optical amplifier is transmitted and then is projected ontothe beam splitter. The light projected onto the beam splitter is at least partially reflected and transmitted, then, as input light, reenters the optical amplifier from the input end of the optical amplifier, and is copied and amplified. The light that is projected onto the beam splitter and is not reflected by the beam splitter is transmitted by the beam splitter to be collimated, and then is output and applied. By setting a condition of passing the light beam output by the optical amplifier through an external specific collimation and clustering path as an essential condition of laser resonance, laser collimation and clustering are achieved. The laser light generates an extremely small spot after irradiating an object and is linearly polarized light in a determined direction. A productusing the laser collimation structure is one of a laser cutting machine, a laser engraving machine, a laser scanner, and a nuclear fusion reaction ignition device.