Thin film deposition device based on APCVD technology

Abstract

The invention discloses a thin film deposition device based on an APCVD technology, and relates to the technical field of normal-pressure chemical deposition. The thin film deposition device based onthe APCVD technology comprises a heating body assembly, a gas inlet box, a diffusion head, a vacuum system and an exhaust mechanism, wherein the heating body assembly is arranged above a wafer; the diffusion head is arranged below the wafer; the exhaust mechanism is arranged below the diffusion head; a gas outlet of the gas inlet box communicates with a gas inlet of the diffusion head; a large number of inert gas is not needed as a barrier, so that protective gas can be saved; through vacuum adsorption of the back surface of the wafer, bending of the wafer caused by film forming temperature and film stress is corrected, back surface film forming can be prevented, and film uniformity is improved; the film forming surface of the wafer faces downwards, and impurity particles fall down due togravity and then are taken away by airflow and do not fall on the wafer; the deposition range is large, thin film deposition is completed on the deposition surface at a time, and the uniformity of thethin film in the deposition surface is good; after the film is formed, the actual value of the film thickness uniformity is less than + / -2 percent; and the heating body assembly can drive the wafer to swing, so that the uniformity of the film on the deposition surface of the wafer can be further improved.

Description

technical field [0001] The invention relates to the technical field of atmospheric pressure chemical deposition, in particular to a film deposition device based on APCVD technology. Background technique [0002] APCVD stands for Atmospheric Pressure Chemical Vapor Deposition, which refers to a chemical vapor deposition method carried out under atmospheric pressure, which is the original method of chemical vapor deposition. Usually, the systematic way to realize this process is: place the wafer deposition side up, heat the bottom of the wafer, spray the gas required for the process by the diffusion head above the wafer, spray a large amount of inert gas around the process gas to form a gas wall, and prevent the air from entering the reaction area or Prevent highly toxic process gases from leaking into the external environment. The system required for this process is simple and the reaction speed is fast, but the uniformity is poor, the step coverage ability is average, and i...

AI Technical Summary

Problems solved by technology

The system required for this process is simple and the reaction speed is fast, but the uniformity is poor, the step coverage ability is average, and it is easy to be polluted by falling particles. Uneven heating and film stress will cause wafer warping, resulting in film formation on the back, and will Consumes a lot of inert gas

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