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Method of manufacturing light-emitting device, light-emitting device, and projector

By forming a multi-layer conductive paste bonding layer in a semiconductor light-emitting device and polishing it, the problem of low heat transfer efficiency of the bonding layer is solved, more efficient heat dissipation and reliability are achieved, and short circuits are prevented.

Inactive Publication Date: 2015-09-30
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If voids are formed, the heat transfer efficiency of the bonding layer will decrease, resulting in a problem that heat dissipation will decrease

Method used

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Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0045] First, the light-emitting device of the first embodiment and its manufacturing method will be described.

[0046] figure 1 It is a sectional view showing the light emitting device according to the first embodiment of the present invention. figure 2 is a schematic representation figure 1 The top view of the semiconductor light-emitting element included in the light-emitting device shown. image 3 yes figure 2 The A-A line sectional view in. Figure 4 ~ Figure 7 are used separately for figure 1 A cross-sectional view illustrating a method of manufacturing a light-emitting device is shown. Figure 8 It is the SEM image which captured the bonding layer.

[0047] light emitting device

[0048] figure 1 The illustrated light emitting device 100 has a semiconductor light emitting element 10, a substrate 20, and a bonding layer 30 for bonding them. Hereinafter, the semiconductor light emitting element 10, the substrate 20, and the bonding layer 30 will be described i...

no. 2 approach

[0094] Figure 9 It is a cross-sectional view of a light emitting device according to a second embodiment of the present invention. Figure 10 yes means Figure 9 Cross-sectional view of the fabrication process of the light-emitting device shown.

[0095] Hereinafter, the light-emitting device according to the second embodiment will be described focusing on the points of difference from the above-mentioned embodiment, and the description of the same matters will be omitted.

[0096] The light emitting device of the second embodiment is the same as the light emitting device of the first embodiment described above except that the relationship between the thicknesses of the first and second bonding layers is different. In addition, in Figure 8 In , the same reference numerals are assigned to the same configurations as those in the above-mentioned embodiment.

[0097] Such as Figure 9 As shown, in the light emitting device 100 of this embodiment, the thickness of the second...

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Abstract

A method of manufacturing a light-emitting device, includes: disposing a first conductive paste on a substrate and sintering the first conductive paste to forma first bonding layer; disposing a second conductive paste on a semiconductor light-emitting element and sintering the second conductive paste to form a second bonding layer; polishing surfaces of the first bonding layer and the second bonding layer; and causing a third conductive paste to intervene between the first bonding layer and the second bonding layer and sintering the third conductive paste to bond the first bonding layer and the second bonding layer together.

Description

technical field [0001] The present invention relates to a manufacturing method of a light emitting device, a light emitting device and a projector. Background technique [0002] In recent years, the development of semiconductor light emitting elements has been actively carried out. Specific semiconductor light emitting elements include semiconductor lasers (Laser Diodes), super luminescent diodes (Super Luminescent Diodes, hereinafter also referred to as "SLDs"), LEDs (Light Emitting Diodes: Light Emitting Diodes) and the like are known. [0003] In a light emitting device including such a semiconductor light emitting element, the semiconductor light emitting element is mounted on a support substrate such as a copper base for the purpose of efficiently dissipating heat from the semiconductor light emitting element (for example, refer to Patent Document 1). In the light-emitting device described in Patent Document 1, the Cu substrate and the semiconductor light-emitting elem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/62H01L21/60G03B21/20
CPCH01L2933/0066H01L33/62H04N5/7441H04N9/3164H01L24/83H01L2224/29019H01L2224/28H01L2224/28105H01L2224/743G03B21/2033H10H20/857H01L2224/83193H01L2224/04026H01L2224/03505H01L2224/0332H01L2224/0384H01L2224/03845H01L2224/8384H01L2224/05568H01L2224/05023H01L2224/29007H01L2224/29036H01L2224/05171H01L2224/29294H01L2224/29339H01L2224/29347H01L2224/05144H01L2224/05118H01L2224/05644H01L2224/2929H01L2224/32014H04N9/315H04N9/3105H10H20/018H10H20/0364H01L24/03H01L24/29H01L24/05H01L24/32H01L24/00
Owner SEIKO EPSON CORP