Light-emitting diode epitaxial wafer and manufacturing method thereof

A technology of light-emitting diodes and epitaxial wafers, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as insufficient current expansion of epitaxial wafers, and achieve the effects of avoiding lattice mismatch, reducing defects, and improving crystal quality
CN104993027BActive Publication Date: 2018-03-06HC SEMITEK SUZHOU
3 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HC SEMITEK SUZHOU
Publication Date
2018-03-06

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
Patent Text Reader

Abstract

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method therefor and belongs to the field of light emitting diodes. The light emitting diode epitaxial wafer comprises a substrate, and a non-doped layer, an N-type layer, an N-type current expansion layer, a multi-quantum well layer and a P-type layer which are formed on the substrate in sequence. The N-type current expansion layer comprises an AlGaN / n-GaN superlattice structure. The content of Al in an AlGaN sublayer of the AlGaN / n-GaN superlattice structure is increased layer by layer in the growth direction of the epitaxial wafer and is from 10% to 80%.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of light-emitting diodes, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique

[0002] As a very influential new product in the optoelectronics industry, LED has the characteristics of small size, long service life, colorful colors, and low energy consumption. It is widely used in lighting, display screens, signal lights, backlights, toys and other fields. Generally, LEDs are mainly composed of brackets, silver glue, chips, gold wires and epoxy resin. Among them, the chip is the core component of the LED, which is processed by epitaxial wafers through multiple processes. Therefore, the structure of the epitaxial wafer determines the quality of the LED.

[0003] The traditional GaN-based epitaxial wafer growth method is to grow an undoped GaN layer, an N-type layer, a multi-quantum well layer and a P-type layer sequentially on the substrate layer. Among th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More