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zno-al 2 o 3 ‑mgo sputtering target and preparation method thereof

A zno-al2o3-mgo, sputtering target technology, applied in sputtering coating, vacuum evaporation coating, coating and other directions, can solve the problems of impurities brought into the powder, wear, unfavorable concentration of single oxides, etc.

Inactive Publication Date: 2017-10-10
MATERION ADVANCED MATERIALS GERMANY GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The enrichment of single oxides in the sputtering target is unfavorable due to arc action, resulting in preferential sputtering and inhomogeneous sputtered layers
[0013] The use of finely ground powders as starting materials requires an extensive grinding process, which involves time and money and inevitably causes attrition which can introduce impurities into the powder

Method used

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  • zno-al  <sub>2</sub> o  <sub>3</sub> ‑mgo sputtering target and preparation method thereof
  • zno-al  <sub>2</sub> o  <sub>3</sub> ‑mgo sputtering target and preparation method thereof
  • zno-al  <sub>2</sub> o  <sub>3</sub> ‑mgo sputtering target and preparation method thereof

Examples

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Embodiment 1

[0048] Preparation of ZnO (86% by weight), Al 2 o 3 (3% by weight) and MgCO 3 (11% by weight) in water. Add containing Na + dispersant to stabilize the resulting slurry and increase the solid content of the slurry to 55% by weight.

[0049] Through a high-energy ball mill, using ZrO with a diameter of 1 mm 2 Grinding balls process the slurry. During grinding, an energy of 0.025 kWh / kg was applied to the slurry. After grinding, particle size measurements of the slurry showed a d10 value of less than 1 μm, and a d90 value of less than 4 μm (see figure 1 ). figure 1 The left ordinate of the middle graph indicates the amount of Q [in %]. The right ordinate gives the total amount of S [in %], and the x-axis shows the particle diameter d [in μm].

[0050] After milling, particle size measurements of the slurry showed a d10 value of less than 1 μm, and a d90 value of less than 4 μm. Subsequently, a binder (ie PVA) was added and the material was spray dried. Agglomerates an...

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Abstract

It is known to produce a crystalline material consisting of ZnO-Al 2 O 3 -MgO(ZAMO) by dry mixing powders of raw material components comprising Al 2 O 3 , ZnO and MgO or precursors of these substances and sintering the powder mixtures so as to obtain the sputtering target. It is an object of the present invention to provide a target with high purity having 3N quality or better and which comprises no or small amounts of single phase consisting of Al 2 O 3 and MgO. For that purpose it is proposed that said the step of mixing comprises a mixing of powders of the raw material components in a liquid, said liquid provides low solubility for said raw material powders. The obtained ZAMO sputtering target is characterized by a microstructure containing single component oxide phase consisting of either Al 2 O 3 or of MgO in an amount of less than 1 % per weight.

Description

technical field [0001] The present invention relates to ZnO-Al 2 o 3 - MgO sputtering target. This material is also referred to as ZAMO in the following. [0002] In addition, the present invention relates to the preparation of ZnO-Al 2 o 3 - A method of MgO sputtering target, comprising the step of: mixing containing Al 2 o 3 , ZnO and MgO, or powders of raw material components of precursors of these substances; and sintering the resulting powder mixture, thereby obtaining the sputtering target, wherein the mixing step includes mixing powders of the raw material components in a liquid. Background technique [0003] EP 1887100B1 discloses a ZAMO material and its preparation. The material is obtained by dry blending various individual oxides using powder metallurgy. It proposes precalcining a mixture of two separate oxides at 1000°C, and finally adding a third oxide for profiling, followed by sintering the target. [0004] The main disadvantages of this method are th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C04B35/453C04B35/626
CPCC04B35/453C04B35/6261C04B35/62625C04B35/62695C04B2235/3206C04B2235/3217C04B2235/3222C04B2235/3244C04B2235/5436C04B2235/5463C04B2235/725C04B2235/763C04B2235/77C04B2235/786C04B2235/80C04B2235/81C23C14/3414
Inventor 安德列亚斯·赫尔佐克克里斯托夫·西蒙斯
Owner MATERION ADVANCED MATERIALS GERMANY GMBH