Graphene phase type light modulator based on planar waveguide

An optical modulator and planar waveguide technology, applied in the field of optoelectronics, can solve the problems of low modulation rate, poor compatibility, and large volume of optical modulators, and achieve the effects of fewer layers, reduced difficulty and cost, and reduced device volume.

Active Publication Date: 2015-11-04
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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Problems solved by technology

[0005] The invention overcomes the deficiencies of the prior art, provides a graphene phase-type optical modulator based on a plana

Method used

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  • Graphene phase type light modulator based on planar waveguide
  • Graphene phase type light modulator based on planar waveguide
  • Graphene phase type light modulator based on planar waveguide

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Embodiment

[0029] Such as figure 1 , figure 2 Shown, based on the graphene phase optical modulator of planar waveguide, this optical modulator comprises substrate layer 1, optical waveguide, first dielectric filling layer 21, second dielectric filling layer 22 and electrode structure; Said first dielectric filling Layer 21, the second dielectric filling layer 22 and the optical waveguide are all located at the upper end of the substrate layer 1, and the first dielectric filling layer 21 and the second dielectric filling layer 22 are respectively located on both sides of the optical waveguide; the optical waveguide is arranged from bottom to top The first rectangular waveguide 31, the first isolation dielectric layer 41, the first graphene layer 51, the second isolation dielectric layer 42, the second graphene layer 52, the third isolation dielectric layer 43, and the second rectangular waveguide 32 are composed of sequentially arranged , the first isolation dielectric layer 41 and the ...

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Abstract

The invention discloses a graphene phase type light modulator based on a planar waveguide. The light modulator comprises a substrate layer, the light waveguide, a first dielectric filling layer, a second dielectric filling layer and an electrode structure. The first dielectric filling layer, the second dielectric filling layer and the light waveguide are located at the upper end of the substrate layer. The light waveguide is composed of a first rectangular waveguide body, a first isolation dielectric layer, a first graphene layer, a second isolation dielectric layer, a second graphene layer, a third isolation dielectric layer and a second rectangular waveguide body in sequence from bottom to top. The electrode structure comprises a first metal layer and a second metal layer, and the first metal layer and the second metal layer are deposited on the upper end face of the extending part of the first graphene layer and the upper end face of the extending part of the second graphene layer respectively. The graphene layers are embedded in the light waveguide bodies, interaction between graphene and light is enhanced, the resistance of a system is reduced, the modulation rate of the modulator is increased, the effective refractive index change in the waveguide can be effectively regulated, and dynamic modulation on a light field phase is achieved.

Description

technical field [0001] The invention relates to an optical modulator, which belongs to the technical field of optoelectronics, and more specifically relates to a graphene phase-type optical modulator based on a planar waveguide. Background technique [0002] The phase type optical modulator is to change the phase information of the optical field passing through the optical modulator to realize the modulation of the electrical signal onto the optical carrier. The realization of traditional phase optical modulators mainly includes: the carrier dispersion effect of Si-based materials, the thermo-optic effect of polymer materials, the electro-optic effect of lithium niobate materials, and the electro- or magnetostrictive properties of special materials. However, traditional modulators are limited by their own material properties. The modulation rate of Si-based optical modulators and lithium niobate optical modulators has reached a bottleneck. It is extremely difficult to break ...

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Application Information

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IPC IPC(8): G02F1/035
CPCG02F1/035
Inventor 刘永叶胜威袁飞邹新海夏瑞杰陆荣国
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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