Adaptive voltage source, shift register and unit thereof, and display

An adaptive voltage and sensing unit technology, applied in static memory, static indicator, digital memory information, etc., can solve the problems of too fast threshold voltage drift of related TFTs and difficult to extend circuit life, and prevent the threshold voltage from drifting too fast. , the effect of prolonging life

Active Publication Date: 2015-11-25
PEKING UNIV SHENZHEN GRADUATE SCHOOL
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in the current GOA circuit, the driving method in which the high level of the clock signal is constant causes the relevant TFT threshold voltage to drift too fast, and the circuit life is difficult to prolong

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Adaptive voltage source, shift register and unit thereof, and display
  • Adaptive voltage source, shift register and unit thereof, and display
  • Adaptive voltage source, shift register and unit thereof, and display

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Please refer to image 3 , is the structural diagram of the self-adaptive voltage source of this embodiment. The adaptive voltage source structure includes: for the voltage source V in series H The sensing module 1 and the reference resistor between the low level end and the low level end form a circuit. Wherein, the sensing module 1 includes a sensing unit TD3, which is preferably a triode. In other embodiments, the sensing unit TD3 may also be composed of other transistors such as diodes by connecting / coupling with other elements to function as a triode. In this embodiment, the sensing unit TD3 is taken as an example of a thin film transistor for illustration. The control electrode (such as the gate) of the sensing unit TD3 is the sensing terminal of the sensing module 1, which is used to be coupled to the transistor Tx to be sensed. In the sensing device circuit The threshold voltage shift of the transistor Tx to be sensed.

[0051] In a specific embodiment, the c...

Embodiment 2

[0073] The adaptive voltage source disclosed in Embodiment 1 is applicable to any device circuit that adjusts the supply voltage based on the threshold voltage of a transistor, and a shift register unit is taken as an example for illustration. Please refer to Figure 7 , is a circuit structure diagram of the shift register unit disclosed in this embodiment. The shift register unit includes: a driving module 20 , an input module 10 , a low level maintaining module 30 and the aforementioned adaptive voltage source 40 . in,

[0074] The driving module 20 is configured to convert the first signal V through the switch state A It is transmitted to the signal output end of the shift register unit, thereby outputting the scan signal. After the drive control terminal Q is charged to obtain the drive voltage, the first signal V A Signal output to the shift register unit. In a specific embodiment, the driving module 20 may include a second transistor T2 for coupling to the signal ou...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An adaptive voltage source, comprising a signal output end, and a reference resistance forming circuit and a sensing module connected in series between a voltage source and a low power level; the sensing module comprises a sensing end coupled to a transistor to be sensed to sense the threshold voltage drift of the transistor to be sensed in a device circuit; the equivalent resistance of the sensing module increases with the increase of the sensed threshold voltage drift; and the signal output end is coupled to a first node coupled to the reference resistance forming circuit and the sensing module, and is used to output adaptive voltage. The output adaptive voltage is adjusted via the threshold voltage drift sensed by the sensing module. Based on the circuit, also disclosed are a shift register and unit thereof, and display.

Description

technical field [0001] The application relates to the field of electronic circuits, in particular to an adaptive voltage source, a shift register and its unit, and a display. Background technique [0002] In recent years, narrow bezel display technology has developed rapidly, and has gradually become the mainstream flat panel display technology. Especially for small and medium-sized thin-film transistor (TFT) displays such as smartphones and tablets, the narrow bezel display technology is more widely used. The core of the narrow frame display technology is the design of the gate-driver array (GOA for short) integrated with the TFT. After using the GOA circuit, not only can the frame size of the display be significantly reduced, making the entire TFT display panel more compact and beautiful, but also the number of row and column driver chips on the TFT panel and the corresponding number of connecting wires can be reduced. In addition, the subsequent packaging process of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G09G3/20G09G3/36G09G3/32G09G3/34G11C19/28
CPCG05F1/625G09G3/20G09G2300/0408G09G2310/0267G09G2310/0286G09G2310/0289G11C19/184G09G3/2092G09G2310/0275G09G2310/08G09G2330/021
Inventor 张盛东廖聪维胡治晋李文杰李君梅
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap