Non-volatile memory device, programmable circuit and content addressable memory

Abstract

The invention provides a non-volatile memory device, a programmable circuit and a content addressable memory. The non-volatile memory device comprises a plurality of non-volatile memory units, wherein each non-volatile memory unit independently comprises a first switch, a first memristor, a second switch, a second memristor and a third switch; the control end of the first switch is coupled to a word line; the first memristor is set to have a first resistance value; the control end of the second switch is coupled to the word line; the second memristor is set to have a second resistance value; the first switch, the first memristor, the second switch and the second memristor are connected in series between a bit line and an inverted bit line in an alternating mode; and the third switch is used for setting the first resistance value and the second resistance value. The non-volatile memory device provided by the invention has the quick read characteristic and does not need to dynamically update internal data.

Description

technical field [0001] The present invention relates to a memory architecture. In particular, a non-volatile memory architecture and associated circuitry. Background technique [0002] Memory is an important component in electronic computers. Many different memory architectures have been developed for different applications. For example, Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM), Static Random Access Memory (Static Random-Access Memory, SRAM), Read-Only Memory (Read-Only Memory, ROM), and Flash Memory (Flash Memory). [0003] Among them, the read-only memory and the flash memory are non-volatile memories, and the data therein can be recorded after the device is powered off. Generally speaking, the above two types of non-volatile memory are more stable in data storage and save power, but are less easy to rewrite and have slower read and write speeds. [0004] Volatile memories such as dynamic random access memory and static random access memory are ...

AI Technical Summary

Problems solved by technology

However, in general, the structure of SRAM usually requires six (or more) transistors to store a bit of data, which is expensive to manufacture and takes up a large circuit space

In addition, when the power supply stops, the data stored in traditional SRAM will still disappear

Images